Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
GT15M321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	900 V		25 V			TIN LEAD	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED		e0			300 ns
MG300J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
MG800J2YS50A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	2900 W	800 A	UNSPECIFIED	MOTOR CONTROL		3 V	UNSPECIFIED	RECTANGULAR	2		1050 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X11	ISOLATED	Not Qualified						550 ns
MIG10Q906HA	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		15 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V						UPPER	R-XUFM-P24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
MG150Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG50Q6ES51	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	72 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
GT40M301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.4 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	900 V		25 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0
GT50J328	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	COLLECTOR							300 ns
GT40G121	Toshiba	N-CHANNEL	SINGLE	NO	100 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	540 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		25 V		6 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	430 ns
MG150Q2YS51	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG25N6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			25 A							6								SILICON	1000 V									Not Qualified
GT50NR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT				SILICON	1050 V						SINGLE	R-PSFM-T3								200 ns
GT5G134	Toshiba
MG300N1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	300 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	1		1300 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V						UPPER	R-PUFM-X4	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					1200 ns
MG50J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG150Q1JS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
MIG15J855	Toshiba			NO	55 W	15 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20		Not Qualified
GT35MR21	Toshiba
MIG50J804H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING		e0			150 ns
GT30J324(Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.45 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR							240 ns
MIG10Q805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		600 ns	20	IN-LINE			150 Cel	SILICON	1200 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
GT20G101(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	60 W	150 Cel	SILICON	400 V		25 V		7 V		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified
MG15Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			15 A							2								SILICON	1200 V									Not Qualified
MIG20J902H	Toshiba					20 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG100J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		500 ns	19	FLANGE MOUNT			150 Cel	SILICON	600 V						UPPER	R-PUFM-X19	ISOLATED	Not Qualified						400 ns
GT50J101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns		3	FLANGE MOUNT		200 W		SILICON	600 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED
MIG10Q906H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		15 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V						UPPER	R-XUFM-P24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
GT40RR21	Toshiba																																		NOT SPECIFIED	NOT SPECIFIED
MG25J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					400 ns
GT8G103(SM)	Toshiba	N-CHANNEL		YES	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V
MG300J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
MIG30J906EA	Toshiba				125 W	35 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG75Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	100 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	600 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	50 ns
MIG15Q901H	Toshiba	N-CHANNEL	COMPLEX	NO		15 A	PLASTIC/EPOXY	POWER CONTROL			SOLDER LUG	RECTANGULAR	7			12	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-D12		Not Qualified	3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
MG200Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MIG15Q804H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	17	FLANGE MOUNT			150 Cel	SILICON	1200 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING		e0			150 ns
MG15J6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	80 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL		3.5 V	SOLDER LUG	RECTANGULAR	6		600 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			TIN LEAD	UPPER	R-PUFM-D13	ISOLATED	Not Qualified	HIGH SPEED		e0			400 ns
MIG10J805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified	HIGH SPEED					150 ns
GT10J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	170 ns
MG200J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified
MG150H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					700 ns
MG25Q6ES51A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
MP6759	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	40 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	6		400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11	ISOLATED	Not Qualified			e0			400 ns
MIG30J951H	Toshiba					30 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG300J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
GT10G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	200 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V		1.2 V		DUAL	R-PDSO-G8		Not Qualified						3100 ns
GT50MR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT				SILICON	900 V						SINGLE	R-PSFM-T3								220 ns
GT60PR21	Toshiba																																		NOT SPECIFIED	NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.