Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG25Q6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			25 A							6								SILICON	1200 V									Not Qualified
GT50M101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	900 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED				350 ns
MG100J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG8J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE		50 W	8 A				4 V			6					Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V							Not Qualified
MIG15Q906HA	Toshiba	N-CHANNEL	COMPLEX	NO		25 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V						UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
GT15J331	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	230 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified					260 ns
GT15J311(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
MG15Q6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		15 A	PLASTIC/EPOXY	POWER CONTROL		4 V	SOLDER LUG	RECTANGULAR	6	500 ns		17	FLANGE MOUNT			150 Cel	SILICON	1200 V						UPPER	R-PUFM-D17		Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
MG75Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG200Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1400 W	300 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	50 ns
MG15Q6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			15 A							6								SILICON	1200 V									Not Qualified
MG50Q1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1		600 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5	ISOLATED	Not Qualified					200 ns
MG25H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		900 ns	3	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				500 ns
MG1200V1US51	Toshiba	N-CHANNEL		NO	5550 W	1200 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1700 V		20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY
GT40T321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		540 ns	3	FLANGE MOUNT			175 Cel	SILICON	1500 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified					240 ns
MG15Q6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			15 A							6								SILICON	1200 V									Not Qualified
MG100J2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A							2								SILICON	600 V									Not Qualified
GT8Q101	Toshiba	N-CHANNEL	SINGLE	NO	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	100 W	150 Cel	SILICON	1200 V		20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0
ST750GXH24	Toshiba
MG200J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG50Q2YS50A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				50 ns
MG200Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG90V2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		90 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1700 V						UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
GT10J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	10 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	90 W	150 Cel	SILICON	600 V		20 V		8 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	240	400 ns
MIG30J904H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		30 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
MG50N1BS1	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				450 ns
MG150J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			150 A							2								SILICON	600 V									Not Qualified
MG25Q6ES51	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified					150 ns
GT60J323	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	260 ns	410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		25 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		e0			230 ns
MIG30J806E	Toshiba				125 W	30 A				2.8 V			6					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT10G102	Toshiba	N-CHANNEL	SINGLE	NO		10 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		4500 ns	3	FLANGE MOUNT				SILICON	400 V						SINGLE	R-PSFM-T3	ISOLATED	Not Qualified					150 ns
MIG20J805E	Toshiba				60 W	20 A				2.6 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MIG15J855E	Toshiba				55 W	15 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG8N6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	6		850 ns	17	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-D17	ISOLATED	Not Qualified	HIGH SPEED				350 ns
MG600Q1US61	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5400 W	600 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	1		600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED				500 ns
MG300J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
MG150J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			150 A							2								SILICON	600 V									Not Qualified
MG15N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				400 ns
GT20D101-Y	Toshiba	N-CHANNEL	SINGLE	NO	180 W	20 A	PLASTIC/EPOXY	POWER AMPLIFIER			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	250 V		20 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		e0
MIG10Q806H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		15 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V						UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
MIG20J906H	Toshiba	N-CHANNEL	COMPLEX	NO		20 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	24	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	UPPER	R-XUFM-P24	ISOLATED	Not Qualified		e0			250 ns
MG50J6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	280 W	50 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	6	300 ns	200 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors	280 W	150 Cel	SILICON	600 V	160 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X19	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	80 ns
MG10Q6ES50A	Toshiba			NO	80 W	15 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-XUFM-X17		Not Qualified
GT8G121	Toshiba	N-CHANNEL		NO	20 W	8 A												Insulated Gate BIP Transistors		150 Cel		400 V		6 V			Tin/Lead (Sn/Pb)						e0
MG75H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				700 ns
MG1200FXF1US51	Toshiba	N-CHANNEL	COMPLEX	NO	4000 W	1200 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	3		4000 ns	9	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	3300 V		20 V				UPPER	R-XUFM-X9	ISOLATED	Not Qualified					2100 ns
MIG30J804H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		30 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V					TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
GT25Q301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	25 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	680 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	300 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.