Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
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Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
50 A |
2 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1100 ns |
7 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
450 ns |
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Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
300 ns |
400 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
NO |
40 W |
10 A |
UNSPECIFIED |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
DUAL |
R-XDIP-T20 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
5 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
300 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
60 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
150 A |
2 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
660 W |
150 A |
UNSPECIFIED |
MOTOR CONTROL |
3.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
300 ns |
500 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
660 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
50 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
POWER CONTROL |
FLAT |
RECTANGULAR |
1 |
2200 ns |
8 |
SMALL OUTLINE |
SILICON |
400 V |
DUAL |
R-PDSO-F8 |
2400 ns |
|||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
SILICON |
1400 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
680 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1100 ns |
7 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
450 ns |
|||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
300 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1000 ns |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
900 V |
25 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
460 ns |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
690 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
100 ns |
|||||||||||||||||||||||||
Toshiba |
200 W |
50 A |
2.8 V |
3 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
28 W |
5 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
40 W |
10 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
400 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
40 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
350 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
40 W |
150 Cel |
SILICON |
600 V |
20 V |
9 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T11 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25879 W |
3000 A |
UNSPECIFIED |
MOTOR CONTROL |
3.2 V |
UNSPECIFIED |
ROUND |
1 |
15000 ns |
4 |
DISK BUTTON |
150 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
UNSPECIFIED |
O-XXDB-X4 |
HIGH RELIABILITY |
850 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
YES |
830 W |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
4 V |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
300 A |
1 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
100 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
100 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||
|
Toshiba |
N-CHANNEL |
NO |
230 W |
50 A |
400 ns |
Insulated Gate BIP Transistors |
175 Cel |
1050 V |
25 V |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
12500 W |
2000 A |
UNSPECIFIED |
MOTOR CONTROL |
3.2 V |
UNSPECIFIED |
ROUND |
1 |
13000 ns |
4 |
DISK BUTTON |
125 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
UNSPECIFIED |
O-XXDB-X4 |
HIGH RELIABILITY |
1400 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
390 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
240 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
300 ns |
500 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
390 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
60 A |
1 |
SILICON |
900 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
NO |
350 W |
72 A |
UNSPECIFIED |
3.2 V |
PIN/PEG |
RECTANGULAR |
1 |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
1200 V |
20 V |
UPPER |
R-XUFM-P12 |
Not Qualified |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
SOLDER LUG |
RECTANGULAR |
6 |
700 ns |
15 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-D15 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSFM-T2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220 |
e0 |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
75 A |
2 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
10 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
4500 ns |
3 |
FLANGE MOUNT |
SILICON |
400 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
150 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
8 A |
PLASTIC/EPOXY |
7 V |
GULL WING |
RECTANGULAR |
1 |
2400 ns |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
1700 ns |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
410 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
230 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
|||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
YES |
20 W |
8 A |
Insulated Gate BIP Transistors |
150 Cel |
400 V |
6 V |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
3.6 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
200 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
800 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
SILICON |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
200 ns |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
250 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.