Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MG50J2YS45

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

MG50J2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

50 A

2

SILICON

600 V

Not Qualified

MG50N2YS1

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

450 ns

GT20D101-O

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

GT10J312(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

400 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MIG10J805

Toshiba

NO

40 W

10 A

UNSPECIFIED

2.8 V

THROUGH-HOLE

RECTANGULAR

1

20

IN-LINE

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

DUAL

R-XDIP-T20

Not Qualified

GT5J311(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT20G101

Toshiba

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

25 V

7 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

MG150J2YS2

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

2

SILICON

600 V

Not Qualified

MG100Q2YS50A

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

660 W

150 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

2

300 ns

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

660 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

50 ns

GT8G151

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

POWER CONTROL

FLAT

RECTANGULAR

1

2200 ns

8

SMALL OUTLINE

SILICON

400 V

DUAL

R-PDSO-F8

2400 ns

GT50S101

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

1400 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT25Q102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

MG50N2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

1100 ns

7

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

450 ns

GT30J122(Q)

Toshiba

N-CHANNEL

SINGLE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

300 ns

MG75J2YS45

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X7

Not Qualified

GT60M303(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

460 ns

MG100Q2YS65H

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

690 W

100 A

UNSPECIFIED

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

100 ns

MIG50J906EA

Toshiba

200 W

50 A

2.8 V

3

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

GT5J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MIG15Q806H

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG10J855E

Toshiba

40 W

10 A

2.8 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

GT30J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

MP6754

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

40 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

6

350 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

40 W

150 Cel

SILICON

600 V

20 V

9 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T11

ISOLATED

Not Qualified

HIGH SPEED

e0

MG1500FXF1US62

Toshiba

ST3000GXH31A

Toshiba

N-CHANNEL

SINGLE

NO

25879 W

3000 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

ROUND

1

15000 ns

4

DISK BUTTON

150 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

850 ns

GT8G151(TE12L)

Toshiba

N-CHANNEL

YES

830 W

Insulated Gate BIP Transistors

150 Cel

400 V

4 V

MG300N1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1000 V

Not Qualified

GT15J101

Toshiba

N-CHANNEL

SINGLE

NO

100 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

100 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

GT50NR21,Q(O

Toshiba

N-CHANNEL

NO

230 W

50 A

400 ns

Insulated Gate BIP Transistors

175 Cel

1050 V

25 V

ST2000GXH31

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12500 W

2000 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

ROUND

1

13000 ns

4

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

1400 ns

MG75J6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

75 A

UNSPECIFIED

MOTOR CONTROL

240 ns

2.7 V

UNSPECIFIED

RECTANGULAR

6

300 ns

500 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

390 W

150 Cel

SILICON

600 V

20 V

8 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT60M103

Toshiba

N-CHANNEL

SINGLE

60 A

1

SILICON

900 V

Not Qualified

MG50Q6ES51A

Toshiba

NO

350 W

72 A

UNSPECIFIED

3.2 V

PIN/PEG

RECTANGULAR

1

12

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-P12

Not Qualified

MIG25Q906H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MG15H6ES1

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

6

700 ns

15

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-D15

ISOLATED

Not Qualified

HIGH SPEED

400 ns

S5J14M

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T2

COLLECTOR

Not Qualified

HIGH SPEED

TO-220

e0

MG75J2YS9

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

75 A

2

SILICON

600 V

Not Qualified

GT10G101

Toshiba

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

4500 ns

3

FLANGE MOUNT

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

150 ns

GT8G131

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

8 A

PLASTIC/EPOXY

7 V

GULL WING

RECTANGULAR

1

2400 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

Not Qualified

e0

1700 ns

GT60J323(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

230 ns

MG500Q1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

GT8G121(SM)

Toshiba

N-CHANNEL

YES

20 W

8 A

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

Tin/Lead (Sn/Pb)

e0

GT20D201-Y

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

3.6 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MG75J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

200 W

75 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT20J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

SILICON

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

200 ns

MIG30J806HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

250 ns

MIG20J901H

Toshiba

N-CHANNEL

COMPLEX

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.