Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG15N6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			15 A							6								SILICON	1000 V							Not Qualified
GT5G103(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE			150 Cel	SILICON	400 V				SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE				1100 ns
MG150Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	50 ns
MIG20J503L	Toshiba					20 A				2.1 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT15N101	Toshiba	N-CHANNEL	SINGLE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	1000 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING	e0			400 ns
GT5G102(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2000 ns	3	IN-LINE			150 Cel	SILICON	400 V				SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified					900 ns
GT60M323	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	200 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	900 V	25 V		TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			370 ns
MG100Q2YS51A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	660 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				50 ns
MG150Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
MG200Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
GT60M324	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		600 ns	3	FLANGE MOUNT			175 Cel	SILICON	900 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified					310 ns
MIG20J906EA	Toshiba				90 W	20 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
MG50Q6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	6	500 ns		19	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X19		Not Qualified	HIGH SPEED
MP6753	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	60 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	6		1000 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V		TIN LEAD	SINGLE	R-PSFM-T11	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			400 ns
MIG10J805E	Toshiba				40 W	10 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
MG50Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	200 ns
GT5G134(Q)	Toshiba
ST1500GXH24	Toshiba
GT5G133	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.83 W		PLASTIC/EPOXY				FLAT	RECTANGULAR	1		2100 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	4 V			DUAL	R-PDSO-F8		Not Qualified					2100 ns
MG25Q6ES11	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			25 A							6								SILICON	1200 V							Not Qualified
MG300Q1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1200 V							Not Qualified
MG150N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	800 W	150 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V				UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				700 ns
MG25N1JS1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	5	FLANGE MOUNT				SILICON	1000 V				UPPER	R-PUFM-X5	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				400 ns
GT8G132	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2200 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8		Not Qualified		e0			1100 ns
MG25J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	6		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V				UPPER	R-PUFM-D17	ISOLATED	Not Qualified					400 ns
GT10J312	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	400 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
GT20J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	120 W	150 Cel	SILICON	600 V	20 V	8 V	TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED	e0			400 ns
MG15H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	1		600 ns	3	FLANGE MOUNT				SILICON	500 V				UPPER	R-PUFM-D3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				400 ns
MG15Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				200 ns
MG100G2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A							2								SILICON	500 V							Not Qualified
MIG50J806E	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
MG50J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		500 ns	19	FLANGE MOUNT			150 Cel	SILICON	600 V				UPPER	R-PUFM-X19	ISOLATED	Not Qualified					400 ns
MG30J6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	100 W	30 A	UNSPECIFIED	MOTOR CONTROL		2.7 V	SOLDER LUG	RECTANGULAR	6	360 ns	550 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	100 W	150 Cel	SILICON	600 V	20 V	8 V		UPPER	R-XUFM-D21	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	500 ns
MG200Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MP7002	Toshiba			YES	37 W	40 A	PLASTIC/EPOXY			2.7 V	GULL WING	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel		600 V	20 V			SINGLE	R-PSFM-G7		Not Qualified
MG200J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V							Not Qualified
MG25N6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			25 A							6								SILICON	1000 V							Not Qualified
GT5G102(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors		150 Cel		400 V	20 V
GT50N324	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	700 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	25 V			SINGLE	R-PSFM-T3							330 ns
GT60J323H	Toshiba	N-CHANNEL	SINGLE	NO	170 W	60 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1	210 ns	530 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	25 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			650 ns
MIG10J503H	Toshiba					10 A				2.3 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
MG50Q1BS1	Toshiba	N-CHANNEL	SINGLE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED
GT45G131	Toshiba	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		360 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V				SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified					160 ns
MG600Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	4300 W	600 A	UNSPECIFIED	MOTOR CONTROL		3.1 V	UNSPECIFIED	RECTANGULAR	2		1400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified					500 ns
GT15J331(2-10S1C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	IN-LINE			150 Cel	SILICON	600 V			TIN LEAD	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			220 ns
MG75N1AS1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT				SILICON	1000 V				UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				400 ns
GT20N135SRA	Toshiba
GT8G121(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2100 ns	3	IN-LINE			150 Cel	SILICON	400 V				SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE				2500 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.