Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG200Q1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X4		Not Qualified	HIGH SPEED
GT15J103(SM)	Toshiba	N-CHANNEL	SINGLE	YES	70 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	70 W	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED				400 ns
GT25G102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V		20 V	5 V	TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified		e0
GT5G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE				1100 ns
MIG25Q904H	Toshiba	N-CHANNEL	COMPLEX	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	7		600 ns	17	FLANGE MOUNT			150 Cel	SILICON	1200 V				TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
S6X06	Toshiba	N-CHANNEL	SINGLE	YES	5000 W		UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	ROUND	1		9000 ns	4	DISK BUTTON			125 Cel	SILICON	4500 V	-40 Cel	20 V			UNSPECIFIED	O-XXDB-X4							1500 ns
MG600J2YS61A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2770 W	600 A	UNSPECIFIED	MOTOR CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified
GT20J101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	20 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
GT30J121	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			240 ns
GT15G101	Toshiba	N-CHANNEL	SINGLE	NO	2 W	15 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	THROUGH-HOLE	RECTANGULAR	1	6000 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	40 W	150 Cel	SILICON	400 V		25 V	7 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		e0
MG200Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1400 W	200 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-PUFM-X7		Not Qualified
MG25J6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	100 W	25 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	SOLDER LUG	RECTANGULAR	6			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-PUFM-D17		Not Qualified	HIGH SPEED
MG100Q1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	670 W	100 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	670 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	240
MG75N1BS1	Toshiba	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT				SILICON	1000 V					UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				500 ns
GT40J121	Toshiba	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		500 ns	3	FLANGE MOUNT				SILICON	600 V					SINGLE	R-PSFM-T3							250 ns
MG1500FXF1US71	Toshiba
GT50JR22	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	180 ns	330 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3					NOT SPECIFIED	NOT SPECIFIED	250 ns
MG150Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-X7		Not Qualified
MIG15Q906H	Toshiba	N-CHANNEL	COMPLEX	NO		25 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V					UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
MIG5Q805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		5 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		600 ns	20	IN-LINE			150 Cel	SILICON	1200 V					DUAL	R-XDIP-T20	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
MG50J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	150 W	50 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V	6 V		UPPER	R-XUFM-X3	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
GT10Q301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	300 ns
MG50N6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	1000 V								Not Qualified
GT50J325(Q)	Toshiba	N-CHANNEL		NO	240 W	50 A												Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MIG20J855H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE	NO		20 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE			150 Cel	SILICON	600 V				TIN LEAD	DUAL	R-XDIP-T20	ISOLATED	Not Qualified	HIGH SPEED	e0			150 ns
MIG20J805	Toshiba			NO	60 W	20 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V			DUAL	R-XDIP-T20		Not Qualified
GT60M105	Toshiba	N-CHANNEL	SINGLE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	900 V					SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED				500 ns
MG300Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	1200 V								Not Qualified
GT25J101	Toshiba	N-CHANNEL	SINGLE	NO	150 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			400 ns
MG50J6ES45	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V								Not Qualified
MIG50J901H	Toshiba	N-CHANNEL	COMPLEX	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			SOLDER LUG	RECTANGULAR	7			12	FLANGE MOUNT				SILICON	600 V					UPPER	R-PUFM-D12		Not Qualified	3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
GT25G101	Toshiba	N-CHANNEL	SINGLE	NO	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	THROUGH-HOLE	RECTANGULAR	1	6000 ns	4500 ns	3	IN-LINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V		25 V	7 V	TIN LEAD	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified		e0			150 ns
GT20G102	Toshiba	N-CHANNEL	SINGLE	NO	60 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	THROUGH-HOLE	RECTANGULAR	1	6000 ns		3	IN-LINE	Insulated Gate BIP Transistors	60 W	150 Cel	SILICON	400 V		20 V	5 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified		e0
MG15N1BS1	Toshiba	N-CHANNEL	SINGLE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT				SILICON	1000 V					UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				400 ns
MIG25Q901H	Toshiba	N-CHANNEL	COMPLEX	NO		25 A	PLASTIC/EPOXY	POWER CONTROL			SOLDER LUG	RECTANGULAR	7			12	FLANGE MOUNT				SILICON	1200 V					UPPER	R-PUFM-D12		Not Qualified	3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
MG75Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	75 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	560 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
GT10J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	80 W	150 Cel	SILICON	600 V		20 V	8 V	TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED	e0			400 ns
MG50Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	50 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	6	300 ns	600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	350 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X17	ISOLATED	Not Qualified	HIGH SPEED				150 ns
MG300N1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1000 V								Not Qualified
ST2000GXH32	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	17123 W	2000 A	UNSPECIFIED	MOTOR CONTROL		3.3 V	UNSPECIFIED	ROUND	1		13150 ns	4	DISK BUTTON			150 Cel	SILICON	4500 V	-40 Cel	20 V			UNSPECIFIED	O-XXDB-X4			HIGH RELIABILITY				810 ns
GT30J110SRA	Toshiba
GT50J301(Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	UNSPECIFIED	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		20 V			SINGLE	R-XSFM-T3	COLLECTOR						400 ns
GT20J121,S4X	Toshiba
GT50NR21,Q	Toshiba
GT50JR22(STA1,E	Toshiba
GT50JR21(STA1,E	Toshiba
GT40QR21,F	Toshiba
GT50N322A(Q)	Toshiba

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.