Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MIG20J855E	Toshiba				60 W	20 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
GT50J123	Toshiba	N-CHANNEL	SINGLE	NO	230 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	25 V			SINGLE	R-PSFM-T3	COLLECTOR					NOT SPECIFIED	NOT SPECIFIED	250 ns
MG50Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1200 V							Not Qualified
MIG15J855H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE	NO		15 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V				DUAL	R-XDIP-T20	ISOLATED	Not Qualified	HIGH SPEED					150 ns
GT25Q101	Toshiba	N-CHANNEL	SINGLE	NO	200 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	800 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V	20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			300 ns
GT5G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		1800 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8		Not Qualified			e0			1400 ns
MIG15J503L	Toshiba					15 A				2.1 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT60N322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	57 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	220 ns	410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V	25 V		TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			450 ns
MG50J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified
MIG10Q806HA	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		15 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V				UPPER	R-XUFM-P24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
MG200Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2000 W	200 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
GT10Q101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
MG100Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MIG15Q904H	Toshiba	N-CHANNEL	COMPLEX	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	7		600 ns	17	FLANGE MOUNT			150 Cel	SILICON	1200 V			TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING		e0			150 ns
MIG20J906HA	Toshiba			NO	90 W	25 A	UNSPECIFIED			2.7 V	PIN/PEG	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V	20 V			UPPER	R-XUFM-P24		Not Qualified
GT60M302	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.3 V	THROUGH-HOLE	RECTANGULAR	1	370 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	900 V	25 V	6 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			350 ns
MG150J7KS60	Toshiba	N-CHANNEL	COMPLEX	NO		150 A	UNSPECIFIED	MOTOR CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	7			26	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X26	ISOLATED	Not Qualified
GT50J341,Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	450 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	25 V			SINGLE	R-PSFM-T3								270 ns
MG300Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1800 W	300 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors	1800 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X8	ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG25Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	250 W	25 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-PUFM-X7		Not Qualified
MIG10J855H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		10 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V				DUAL	R-XDIP-T20	ISOLATED	Not Qualified	HIGH SPEED					150 ns
GT60J323H(Q)	Toshiba	N-CHANNEL		NO	170 W	60 A								210 ns				Insulated Gate BIP Transistors		150 Cel		600 V	25 V
GT50J328(Q)	Toshiba	N-CHANNEL		NO	140 W	50 A								170 ns				Insulated Gate BIP Transistors		150 Cel		600 V	25 V
MG150J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified
GT50J342	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	394 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	25 V			SINGLE	R-PSFM-T3								270 ns
GT8J101	Toshiba	N-CHANNEL	SINGLE	NO	30 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	30 W	150 Cel	SILICON	600 V	20 V	6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED	TO-220AB	e0			400 ns
MG100Q2YS51	Toshiba	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	POWER CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified						200 ns
MG150Q1JS44	Toshiba				1100 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V	20 V
MG300Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					170 ns
MG150Q1BS11	Toshiba	N-CHANNEL	SINGLE			150 A							1								SILICON	1200 V							Not Qualified
GT50G321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	540 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V	25 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	430 ns
MG200Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG25Q6ES50	Toshiba			NO	200 W	35 A	UNSPECIFIED			3.2 V	PIN/PEG	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V	20 V			DUAL	R-XDFM-P17		Not Qualified
MG600Q1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT			150 Cel	SILICON	1200 V				UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG25J2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			25 A							2								SILICON	600 V							Not Qualified
GT20J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	130 W	150 Cel	SILICON	600 V	20 V	8 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	400 ns
MG150J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V				UPPER	R-PUFM-X7	ISOLATED	Not Qualified						400 ns
GT30J122A	Toshiba	N-CHANNEL	SINGLE	NO	120 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	700 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	25 V			SINGLE	R-PSFM-T3								500 ns
GT20J341,S4X(S	Toshiba	N-CHANNEL		NO	45 W	20 A												Insulated Gate BIP Transistors		150 Cel		600 V	25 V
S5978	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED
GT60J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	500 ns	800 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	25 V		TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			350 ns
MG75Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-PUFM-X7		Not Qualified
GT50G102	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1800 ns	3	FLANGE MOUNT				SILICON	400 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING					400 ns
GT60J322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1	1500 ns	1500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	25 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e0			350 ns
MG25J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	150 W	25 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	125 W	150 Cel	SILICON	600 V	20 V	6 V		UPPER	R-XUFM-X3	ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG75Q2YS42	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	560 W	75 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	560 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT50Q101	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1	500 ns		3	FLANGE MOUNT		300 W		SILICON	1200 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED
MG25Q1BS1	Toshiba	N-CHANNEL	SINGLE	NO	150 W	25 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.