Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG30V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	500 W	30 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	500 W	150 Cel	SILICON	1700 V		20 V		8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	100 ns
GT60M101	Toshiba	N-CHANNEL	SINGLE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT				SILICON	900 V						SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING				400 ns
MG300Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2800 W	300 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG150J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V	300 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	240	150 ns
MG75J6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	6	350 ns		19	FLANGE MOUNT				SILICON	600 V						UPPER	R-PUFM-X19		Not Qualified	HIGH SPEED
MG75J1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN CONFIGURABLE DIODE	NO	390 W	75 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	390 W	150 Cel	SILICON	600 V	160 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	80 ns
MG50J6ES91	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			50 A							6								SILICON	600 V									Not Qualified
GT60N321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		25 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	330 ns
ST2100GXH24A	Toshiba
MG200Q1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-PUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG50Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
GT30J324	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.45 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6.5 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		e0			240 ns
GT8G131(TE12L)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	8 A	PLASTIC/EPOXY			7 V	GULL WING	RECTANGULAR	1		2400 ns	8	SMALL OUTLINE			150 Cel	SILICON	400 V		6 V		1.5 V		DUAL	R-PDSO-G8							1700 ns
MIG20J806HA	Toshiba			NO	90 W	25 A	UNSPECIFIED			2.7 V	PIN/PEG	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				UPPER	R-XUFM-P24		Not Qualified
MG600Q1US45	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		600 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V						UPPER	R-PUFM-X5		Not Qualified
MIG50J906H	Toshiba			NO	200 W	50 A	UNSPECIFIED			2.7 V	UNSPECIFIED	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				UPPER	R-XUFM-X24		Not Qualified
GT30J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	155 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	155 W	150 Cel	SILICON	600 V		20 V		8 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	240	400 ns
GT15J331(2-10S2C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED	e0			220 ns
GT80J101A	Toshiba	N-CHANNEL	SINGLE	NO	200 W	80 A	PLASTIC/EPOXY	POWER CONTROL	600 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		e0			500 ns
MG100Q1ZS50	Toshiba			NO	660 W	150 A	UNSPECIFIED			3.6 V	UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-XUFM-X5		Not Qualified
MG300Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2000 W	300 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-PUFM-X4		Not Qualified
GT40QR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT				SILICON	1200 V						SINGLE	R-PSFM-T3					NOT SPECIFIED	NOT SPECIFIED	180 ns
MG1200V2YS71	Toshiba
GT30J126	Toshiba	N-CHANNEL	SINGLE	NO		30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		Not Qualified					240 ns
MG25J6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	100 W	25 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	SOLDER LUG	RECTANGULAR	6	350 ns		17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-PUFM-D17		Not Qualified	HIGH SPEED
GT8G136	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	150 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		3500 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		6 V			TIN LEAD	DUAL	R-PDSO-G8		Not Qualified		e0			3200 ns
MIG20J906E	Toshiba				90 W	20 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MIG15J805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		15 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE				SILICON	600 V						DUAL	R-XDIP-T20	ISOLATED	Not Qualified	HIGH SPEED				150 ns
GT8G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V						SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE				1400 ns
GT5J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
MG25N1BS1	Toshiba	N-CHANNEL	SINGLE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT				SILICON	1000 V						UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				400 ns
MG200N1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			200 A							1								SILICON	1000 V									Not Qualified
MIG15J805E	Toshiba				55 W	15 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
GT8J102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	600 V		20 V		6 V		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	HIGH SPEED
MG100J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	300 W	100 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X3	ISOLATED	Not Qualified	HIGH SPEED				400 ns
MP6752	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	60 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	6		500 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11	ISOLATED	Not Qualified		e0			400 ns
GT45F131	Toshiba	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		320 ns	2	SMALL OUTLINE			150 Cel	SILICON	300 V						SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified					220 ns
GT60M104	Toshiba	N-CHANNEL	SINGLE	NO	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	3.7 V	THROUGH-HOLE	RECTANGULAR	1	400 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	900 V		25 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0
MG25Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	6	300 ns	600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X17	ISOLATED	Not Qualified	HIGH SPEED				150 ns
GT8G103(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE			150 Cel	SILICON	400 V						SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE				1400 ns
MG75J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	390 W	75 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	390 W	150 Cel	SILICON	600 V	160 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	80 ns
MG8Q6ES46	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1200 V									Not Qualified
GT30J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	59 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		400 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V				SINGLE	R-PSFM-T3	COLLECTOR						250 ns
GT35J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		37 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		510 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED				330 ns
MIG10J855	Toshiba			NO	40 W	10 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				DUAL	R-XDIP-T20		Not Qualified
GT20G102(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	60 W	150 Cel	SILICON	400 V		20 V		5 V		SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified
MIG25Q806H	Toshiba			NO	200 W	35 A	PLASTIC/EPOXY			3.2 V	PIN/PEG	RECTANGULAR	3			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-PUFM-P24		Not Qualified
MG15Q6ES51A	Toshiba			NO	145 W	25 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel		1200 V		20 V				UPPER	R-XUFM-X17		Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.