Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
S6X06B(ANSD,Q)	Toshiba	N-CHANNEL	SINGLE	YES	5000 W		UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	ROUND	1		9000 ns	4	DISK BUTTON			125 Cel	SILICON	4500 V		-40 Cel	20 V				UNSPECIFIED	O-XXDB-X4								1500 ns
GT40J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		510 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified						500 ns
GT60M322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	210 ns	390 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	950 V			25 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			620 ns
MG300Q2YS61	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					500 ns
GT15J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V			25 V				SINGLE	R-PSFM-T3	ISOLATED			TO-220AB				180 ns
MG600J2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
ST1000EX21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		1000 A	CERAMIC, METAL-SEALED COFIRED	POWER CONTROL			UNSPECIFIED	ROUND	1		1700 ns	4	DISK BUTTON				SILICON	2500 V							END	O-CEDB-X4								2200 ns
MG300J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
MG25J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	125 W	25 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG75H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					700 ns
MG75N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					500 ns
MG8Q6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		8 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	6	500 ns		17	FLANGE MOUNT			150 Cel	SILICON	1200 V							UPPER	R-XUFM-X17		Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED
MG300Q1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2500 W	400 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1	300 ns	600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2500 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
MG800J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		800 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-XUFM-X5		Not Qualified	HIGH SPEED			NOT SPECIFIED	240
MG75J6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		500 ns	19	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-PUFM-X19	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	400 ns
MG200J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified						400 ns
MIG30J806EA	Toshiba				125 W	30 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
S5J17M	Toshiba	N-CHANNEL	SINGLE	NO		15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			2	FLANGE MOUNT				SILICON	1200 V							SINGLE	R-PSFM-T2	COLLECTOR	Not Qualified	HIGH SPEED	TO-220
MG300Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2000 W	400 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	2000 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
MG100N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT				SILICON	1000 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					600 ns
MP6757	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	72 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL		3.1 V	THROUGH-HOLE	RECTANGULAR	6		400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors			SILICON	600 V			20 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11	ISOLATED	Not Qualified			e0			600 ns
MG25Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT		250 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED
GT8G133	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W		PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			6 V		1.4 V		DUAL	R-PDSO-G8		Not Qualified						1700 ns
GT15Q311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		720 ns	3	SMALL OUTLINE			150 Cel	SILICON	1200 V						TIN LEAD	SINGLE	R-PSSO-G3	COLLECTOR	Not Qualified	HIGH SPEED SWITCHING		e0			170 ns
GT50J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	450 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V			25 V				SINGLE	R-PSFM-T3								270 ns
GT40RR21(STA1,E,S)	Toshiba	N-CHANNEL		NO	230 W	40 A								400 ns				Insulated Gate BIP Transistors		175 Cel		1350 V			25 V
GT45F123	Toshiba	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		290 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V							SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB				230 ns
GT40Q323	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	39 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	210 ns	430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			25 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			260 ns
MIG10J504H	Toshiba					10 A				2.2 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT8Q102(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	500 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	50 W	150 Cel	SILICON	1200 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified			e0
MIG20J503H	Toshiba					20 A				2.3 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
GT30J101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	155 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			400 ns
MG25N1ZS1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	5	FLANGE MOUNT				SILICON	1000 V							UPPER	R-PUFM-X5	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					400 ns
MG75J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			75 A							2								SILICON	600 V										Not Qualified
MG150J1JS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	780 W	150 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	500 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	780 W	150 Cel	SILICON	600 V			20 V		8 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	500 ns
GT8G121(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2100 ns	2	SMALL OUTLINE			150 Cel	SILICON	400 V							SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					2500 ns
GT40T301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	400 ns	600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1500 V			25 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			450 ns
MG150Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	890 W	150 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified						100 ns
GT8G101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE				SILICON	400 V							SINGLE	R-PSIP-T3		Not Qualified						1100 ns
MG100Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	670 W	100 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	670 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240
MG25N2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT				SILICON	1000 V							UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					400 ns
MG15Q6ES51	Toshiba			NO	145 W	25 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel		1200 V			20 V				UPPER	R-XUFM-X17		Not Qualified
MIG25Q806HA	Toshiba			NO	200 W	35 A	PLASTIC/EPOXY			3.2 V	THROUGH-HOLE	RECTANGULAR	3			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V			20 V				UPPER	R-PUFM-T24		Not Qualified
MIG15J805	Toshiba			NO	55 W	15 A	UNSPECIFIED			2.8 V	THROUGH-HOLE	RECTANGULAR	1			20	IN-LINE	Insulated Gate BIP Transistors		150 Cel		600 V			20 V				DUAL	R-XDIP-T20		Not Qualified
GT25J102	Toshiba	N-CHANNEL	SINGLE	NO	80 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	80 W	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED
GT5G102	Toshiba	N-CHANNEL		NO	20 W	5 A												Insulated Gate BIP Transistors		150 Cel		400 V			20 V
MG240V1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2400 W	240 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	1	1500 ns	400 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	2400 W	150 Cel	SILICON	1700 V			20 V		8 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	100 ns
MIG12J504L	Toshiba					12 A				2.3 V			1					Insulated Gate BIP Transistors		100 Cel		600 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.