Toshiba Insulated Gate Bipolar Transistors (IGBT) 614

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG100N2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A							2								SILICON	1000 V							Not Qualified
GT50J122	Toshiba	N-CHANNEL	SINGLE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	260 ns	410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	25 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED	e0			230 ns
MG1800V1US51	Toshiba	N-CHANNEL		NO	8300 W	1800 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1700 V	20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY
GT40WR21	Toshiba
S5979	Toshiba	N-CHANNEL	SINGLE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X3		Not Qualified	HIGH SPEED
GT50JR21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	210 ns	370 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	25 V			SINGLE	R-PSFM-T3					NOT SPECIFIED	NOT SPECIFIED	250 ns
GT15J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
MIG10J503L	Toshiba				43 W	10 A				2.1 V			1					Insulated Gate BIP Transistors		100 Cel		600 V
MIG30J906E	Toshiba				125 W	35 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
MIG20J806E	Toshiba				90 W	25 A				2.8 V			1					Insulated Gate BIP Transistors		150 Cel		600 V	20 V
MG25J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified
MG75Q2YS51	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	625 W	100 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	600 W	150 Cel	SILICON	1200 V	20 V	6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	50 ns
MIG20J805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		20 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		500 ns	20	IN-LINE			150 Cel	SILICON	600 V				DUAL	R-XDIP-T20	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	250 ns
MG8Q6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			8 A							6								SILICON	1200 V							Not Qualified
MG25Q6ES42	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	POWER CONTROL		4 V	SOLDER LUG	RECTANGULAR	6	500 ns		17	FLANGE MOUNT			150 Cel	SILICON	1200 V				UPPER	R-PUFM-D17		Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
GT20J121	Toshiba
MG100J6ES40	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	6	350 ns		19	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X19		Not Qualified	HIGH SPEED
ST1200FXF21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	7100 W	1200 A	CERAMIC, METAL-SEALED COFIRED	MOTOR CONTROL			UNSPECIFIED	ROUND	1		2500 ns	4	DISK BUTTON	Insulated Gate BIP Transistors		125 Cel	SILICON	3300 V	20 V			END	O-CEDB-X4		Not Qualified					5500 ns
MG50J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT				SILICON	600 V				UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG300Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	1200 V							Not Qualified
GT5G103(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors		150 Cel		400 V	6 V
MIG25Q906HA	Toshiba	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V				UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
GT8G134	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		1800 ns	8	SMALL OUTLINE			150 Cel	SILICON	400 V				DUAL	R-PDSO-G8		Not Qualified					800 ns
GT50T101	Toshiba	N-CHANNEL	SINGLE			50 A							1								SILICON	1500 V							Not Qualified
GT50J121	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V			SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	240 ns
MG500Q1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		500 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X5		Not Qualified	HIGH SPEED
MG100Q1JS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
GT25G102	Toshiba	N-CHANNEL	SINGLE	NO	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	THROUGH-HOLE	RECTANGULAR	1	6000 ns		3	IN-LINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V	20 V	5 V	TIN LEAD	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified		e0
MG200Q1JS9	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY				UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified	CHOPPER SWITCH
MIG50J904H	Toshiba	N-CHANNEL	COMPLEX	NO		50 A	PLASTIC/EPOXY	MOTOR CONTROL			PIN/PEG	RECTANGULAR	7		500 ns	17	FLANGE MOUNT			150 Cel	SILICON	600 V			TIN LEAD	DUAL	R-PDFM-P17	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	e0			150 ns
MG300Q1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1200 V							Not Qualified
MG200Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X4		Not Qualified
GT8G151(TE12L1)	Toshiba	N-CHANNEL		YES	830 W													Insulated Gate BIP Transistors		150 Cel		400 V	4 V
GT8Q101(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		700 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V			TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified		e0			400 ns
MP6751	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		15 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		1000 ns	11	FLANGE MOUNT			150 Cel	SILICON	600 V			TIN LEAD	SINGLE	R-XSFM-T11	ISOLATED	Not Qualified	HIGH SPEED	e0			400 ns
MG15N6ES1	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		15 A	PLASTIC/EPOXY	MOTOR CONTROL			SOLDER LUG	RECTANGULAR	6		1000 ns	17	FLANGE MOUNT				SILICON	1000 V				UPPER	R-PUFM-D17	ISOLATED	Not Qualified	HIGH SPEED				400 ns
MG120V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1200 W	120 A	UNSPECIFIED	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1200 W	150 Cel	SILICON	1700 V	20 V	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	100 ns
MG15Q6ES50	Toshiba			NO	145 W	25 A	UNSPECIFIED			3.2 V	PIN/PEG	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V	20 V			DUAL	R-XDFM-P17		Not Qualified
MIG15Q806HA	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		25 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		600 ns	24	FLANGE MOUNT			150 Cel	SILICON	1200 V				UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	150 ns
MG300H1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		300 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	4	FLANGE MOUNT				SILICON	500 V				UPPER	R-PUFM-X4	ISOLATED	Not Qualified	HIGH SPEED				800 ns
MG100Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V				UPPER	R-PUFM-X7		Not Qualified
MG600Q1US65H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	5400 W	600 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1		900 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V			UPPER	R-XUFM-X4	ISOLATED	Not Qualified					300 ns
MG25H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V				UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				500 ns
GT25G101(SM)	Toshiba	N-CHANNEL	SINGLE	YES	75 W	25 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	500 ns	8 V	GULL WING	RECTANGULAR	1	6000 ns	4500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	75 W	150 Cel	SILICON	400 V	25 V	7 V	TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified		e0			150 ns
MIG30J906HA	Toshiba	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	MOTOR CONTROL			PIN/PEG	RECTANGULAR	6		500 ns	24	FLANGE MOUNT			150 Cel	SILICON	600 V				UPPER	R-XUFM-P24	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	250 ns
GT30N135SRA	Toshiba
GT40T302	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		830 ns	3	FLANGE MOUNT			150 Cel	SILICON	1500 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified					850 ns
MIG50J806EA	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V	20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.