SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR Power Field Effect Transistors (FET) 69

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BTS282ZE3180AATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

49 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0095 ohm

80 A

SINGLE

R-PSSO-G7

DRAIN

AVALANCHE RATED

e3

AEC-Q101

BTS244ZE3062AATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

170 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

1650 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

130 ns

-40 Cel

100 ns

TIN

.018 ohm

35 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

TO-263

e3

400 pF

AEC-Q101

BTS282ZE3230AKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

49 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0095 ohm

80 A

SINGLE

R-PSFM-T7

DRAIN

AVALANCHE RATED

e3

AEC-Q101

BTS282ZE3180AATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

49 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0095 ohm

80 A

SINGLE

R-PSSO-G7

DRAIN

AVALANCHE RATED

AEC-Q101

BTS244ZE3043AKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

170 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

188 A

1650 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

130 ns

-40 Cel

100 ns

TIN

.018 ohm

35 A

SINGLE

R-PSFM-T5

DRAIN

AVALANCHE RATED

TO-220

e3

400 pF

AEC-Q101

BTS282ZE-3180A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

49 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0095 ohm

80 A

SINGLE

R-PSSO-G7

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

NIB6404-5L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

450 mJ

52 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.02 ohm

52 A

SINGLE

R-PSSO-G4

Not Qualified

e0

235

BTS100E3045A

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BTS114AE3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

17 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS110NKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS100E3045

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BTS115-E3046

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

12.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

12.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

BTS113AE3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.17 ohm

11.5 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

BTS121AE3045

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

BTS113AE3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

11.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.17 ohm

11.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

220

BTS114-E3045

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BTS130E3045

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

27 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

27 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

C67078-S5015-A4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.17 ohm

11.5 A

SINGLE

R-PSSO-G2

DRAIN

BTS110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

BTS129NKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS115ANKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

15.5 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

C67078-S5015-A2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.17 ohm

11.5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS129E3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS115

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

12.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

12.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

BTS100-E3046

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

8 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

BTS136

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

27 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.05 ohm

27 A

DUAL

R-PDSO-G2

Not Qualified

e0

BTS112ASMD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

130 ns

.15 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

90 pF

BTS115A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62 A

15.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

15.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

BTS131E3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.06 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS113ANKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

11.5 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

BTS112AE3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

130 ns

.15 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

90 pF

BTS100-E3044

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

8 A

SINGLE

R-PSSO-G3

DRAIN

Not Qualified

BTS115AE3045ANTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

15.5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS112ANKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

130 ns

.15 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

90 pF

BTS114-E3046

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

14 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

BTS113A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46 A

11.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.17 ohm

11.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BTS113AE3064NKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.17 ohm

11.5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS110-E3046

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

BTS121ANKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

BTS950

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

9 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

9 A

SINGLE

R-PSFM-T5

Not Qualified

e0

BTS903

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3.6 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

3.6 A

SINGLE

R-PSFM-T5

Not Qualified

e0

BTS115AE3045

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

62 A

15.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.12 ohm

15.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

BTS115-E3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.125 ohm

12.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

BTS114-E3044

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

14 A

SINGLE

R-PSSO-G3

DRAIN

Not Qualified

BTS114

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BTS112AE3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

MATTE TIN

.15 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

220

C67078-S5015-A3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.17 ohm

11.5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BTS115-E3045

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

12.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

12.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.