Renesas Electronics RF Small Signal Field Effect Transistors (FET) 714

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Manufacturers (1)
    • Renesas Electronics
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE3210S01-T1B

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

NE5550279A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE5550279A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE3210S01

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

3 V

12 dB

GULL WING

ROUND

DEPLETION MODE

1

KU BAND

4

DISK BUTTON

HETERO-JUNCTION

SILICON

TIN LEAD

.015 A

RADIAL

O-XRDB-G4

SOURCE

Not Qualified

e0

30

230

2SK197

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

NE3210S01-T1B-A

Renesas Electronics

N-CHANNEL

.07 A

FET RF Small Signal

.165 W

125 Cel

.07 A

NE3515S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3515S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3210S01-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

NE34018-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

14 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

HETERO-JUNCTION

SILICON

TIN LEAD

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

NE3508M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.175 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

TIN BISMUTH

.03 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

LOW NOISE

e6

NE3512S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.015 A

QUAD

R-PQMW-F4

Not Qualified

LOW NOISE

e6

NE3503M04-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.07 A

4

SMALL OUTLINE

FET RF Small Signal

HETERO-JUNCTION

.125 W

125 Cel

SILICON

TIN BISMUTH

.015 A

DUAL

R-PDSO-F4

Not Qualified

e6

NE4210S01

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

UNSPECIFIED

AMPLIFIER

3 V

11 dB

GULL WING

ROUND

DEPLETION MODE

1

KU BAND

4

DISK BUTTON

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

NICKEL GOLD

.015 A

RADIAL

O-XRDB-G4

SOURCE

Not Qualified

e4

2SK54-C

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

.6 pF

BB201M

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

DUAL

R-PDSO-G4

Not Qualified

NE428M01-T1

Renesas Electronics

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

6

SMALL OUTLINE

DUAL

R-PDSO-G6

Not Qualified

NE4210S01-T1B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

GALLIUM ARSENIDE

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3SK290

Renesas Electronics

N-CHANNEL

SINGLE

YES

.1 W

PLASTIC/EPOXY

AMPLIFIER

17 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.03 pF

NE76184B-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

RADIAL

O-CRDB-F4

LOW NOISE

3SK242-T2-VAA

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

3SK222-V21-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.025 A

DUAL

R-PDSO-G4

Not Qualified

e6

.03 pF

BB101MAU-UR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

16 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.03 pF

3SK194IY-TL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

NE76184A-SL

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

5 V

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.1 A

RADIAL

O-CRDB-F4

LOW NOISE

BB305M

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

24 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.025 A

DUAL

R-PDSO-G4

Not Qualified

e0

.04 pF

2SK1229

Renesas Electronics

N-CHANNEL

.06 A

FET RF Small Signal

.16 W

125 Cel

.06 A

NE800199

Renesas Electronics

N-CHANNEL

.55 A

Other Transistors

METAL SEMICONDUCTOR

2.5 W

175 Cel

.55 A

BB502C

Renesas Electronics

N-CHANNEL

SINGLE

YES

.1 W

PLASTIC/EPOXY

AMPLIFIER

6 V

17 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.02 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G4

1

ISOLATED

Not Qualified

LOW NOISE

.05 pF

2SK217ZD01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

PF0143

Renesas Electronics

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ULTRA HIGH FREQUENCY BAND

5

FLANGE MOUNT

SILICON

SINGLE

R-PSFM-G5

Not Qualified

NE33284A

Renesas Electronics

N-CHANNEL

.08 A

FET RF Small Signal

.165 W

150 Cel

.08 A

3SK300ZR-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.04 pF

3SK296ZQ-UR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

16 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.03 pF

3SK319

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

6 V

18 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.02 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.03 pF

NE4210S01-T1B

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

NICKEL GOLD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e4

3SK239AXR-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

17 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.05 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.05 pF

3SK242-T1-VAC

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

3SK135A-KS

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

16 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

.006 A

DUAL

R-PDSO-G4

.03 pF

3SK203-M

Renesas Electronics

3SK297ZP-TL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

.04 pF

2SK168FRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

.02 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3SK230-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

16.5 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.025 A

DUAL

R-PDSO-G4

Not Qualified

LOW NOISE

e6

.03 pF

NEM090853P-28-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

PLASTIC/EPOXY

AMPLIFIER

65 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

10 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.01 A

DUAL

R-PDFM-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3SK242-T1-V12

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

2SK360

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.03 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

3SK137

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

3SK318

Renesas Electronics

N-CHANNEL

SINGLE

YES

.1 W

PLASTIC/EPOXY

AMPLIFIER

6 V

18 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.02 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.03 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.