SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

3N214

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

20 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

TPS1100PWG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.504 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.27 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.27 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

3N217

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

70 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

2 pF

3N216

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

50 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

TPS1100DRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.6 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TPS1101D

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.791 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TPS1101Y

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

15 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

8

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

UPPER

R-XUUC-N8

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TPS1101DG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

TPS1101PWLE

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.71 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.18 A

16

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

2.18 A

DUAL

R-PDSO-G16

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

NOT SPECIFIED

NOT SPECIFIED

TPS1101PW

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

2.18 A

DUAL

R-PDSO-G16

Not Qualified

ESD PROTECTED

TPS1101DR

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.791 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.62 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.791 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

3N215

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

20 V

WIRE

ROUND

DEPLETION MODE

1

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

35 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

TPS1101DRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.62 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.19 ohm

2.3 A

DUAL

R-PDSO-G8

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

MS-012AA

e4

30

260

TPS1100Y

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

15 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

UPPER

R-XUUC-N5

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TPS1101PWR

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.71 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.18 A

16

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.71 W

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.19 ohm

2.18 A

DUAL

R-PDSO-G16

1

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

3N161

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.36 W

METAL

SWITCHING

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.125 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.125 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

4 pF

TPS1100PWRG4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.504 W

PLASTIC/EPOXY

SWITCHING

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.27 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

1.27 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

e4

30

260

JFE150DCKT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

MATTE TIN

DUAL

R-PDSO-G5

1

e3

260

7 pF

JFE150DBVR

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G5

7 pF

JFE150DBVT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G5

7 pF

CSD25304W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.092 ohm

3 A

BOTTOM

R-XBGA-B6

1

e1

30

260

15.6 pF

CSD23203W

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.053 ohm

3 A

BOTTOM

R-PBGA-B6

1

e1

30

260

172 pF

CSD25304W1015T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.092 ohm

3 A

BOTTOM

R-XBGA-B6

1

e1

30

260

15.6 pF

CSD13302W

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

CSD25303W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.092 ohm

3 A

BOTTOM

R-PBGA-B6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

65 pF

CSD13302WT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

CSD23203WT

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

8 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.053 ohm

3 A

BOTTOM

R-PBGA-B6

1

e1

30

260

172 pF

CSD25301W1015

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.22 ohm

2.2 A

BOTTOM

R-PBGA-B6

1

Not Qualified

e1

30

260

40 pF

MMFT2955ET1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.3 ohm

1.2 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e3

260

MMFT6661T3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

90 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

4 ohm

.5 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

e0

MMFT960T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.7 ohm

.3 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

TO-261AA

e0

MMFT2N02ELT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.15 ohm

1.6 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-261AA

e0

MMFT3055ET3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

1.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

e0

MMFT3055ET1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

1.7 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

TO-261AA

e0

235

MMFT2955ET3

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

1.2 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e0

235

MMFT1N10ET1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.25 ohm

1 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e0

235

MMFT3055VT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.13 ohm

1.7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e0

235

50 pF

MMFT3055VT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.13 ohm

1.7 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e3

260

50 pF

MMFT3055VLT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.14 ohm

1.5 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

TO-261AA

e0

235

60 pF

MMFT3055VT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.13 ohm

1.7 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e0

235

50 pF

MMFT2N25E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

2 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

e0

10 pF

MMFT2N25ET3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

2 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

10 pF

MMFT3055VLT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.94 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.14 ohm

1.5 A

DUAL

R-PDSO-G4

3

DRAIN

Not Qualified

TO-261AA

e0

235

60 pF

MMFT107T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

14 ohm

.25 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e0

235

MMFT2N25EG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

2 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

NOT SPECIFIED

NOT SPECIFIED

10 pF

MMFT3055VT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.13 ohm

1.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e3

260

50 pF

MMFT3055E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

1.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261

e0

MMFT107T3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

14 ohm

.25 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e0

235

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.