BGA Other Function Memory ICs 58

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
THGBMDG5D1LBAIT	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				4294967296 words				8	GRID ARRAY					85 Cel	4GX8	4G	-25 Cel		BOTTOM	R-PBGA-B153								34359738368 bit
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		4294967296 words	1.2			4	GRID ARRAY				1 mm	105 Cel	4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896		1.26 V	4.2 mm			31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED			31 mm
THGBMHG6C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words				8	GRID ARRAY					85 Cel	8GX8	8G	-25 Cel		BOTTOM	R-PBGA-B153								68719476736 bit
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified	67108864 bit	1.71 V		e0			NOR TYPE		35 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel	1MX16	1M	-40 Cel		BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	16777216 bit	1.71 V					NOR TYPE		35 mm
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words	1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	33554432 bit	1.71 V		e0			NOR TYPE		35 mm
TH50VSF0401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1461ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			60 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1320ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1460ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			60 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1303ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1302ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1321ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0302BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0303BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			40 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
THGBMHG9C8LBAU8	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				68719476736 words				8	GRID ARRAY					105 Cel	64GX8	64G	-40 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
THGBMHG8C2LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				34359738368 words				8	GRID ARRAY					85 Cel	32GX8	32G	-25 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG7C2LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		17179869184 words				8	GRID ARRAY					85 Cel	16GX8	16G	-40 Cel		BOTTOM	R-PBGA-B153								137438953472 bit
THGBMHG8C4LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		34359738368 words				8	GRID ARRAY					85 Cel	32GX8	32G	-40 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG7C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				17179869184 words				8	GRID ARRAY					85 Cel	16GX8	16G	-25 Cel		BOTTOM	R-PBGA-B153								137438953472 bit
THGBMHG6C1LBAWL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		8589934592 words				8	GRID ARRAY					85 Cel	8GX8	8G	-40 Cel		BOTTOM	R-PBGA-B153								68719476736 bit
THGBMGG9U4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				68719476736 words				8	GRID ARRAY					85 Cel	64GX8	64G	-25 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
THGBMHG6C1LBAAL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		8589934592 words				8	GRID ARRAY					85 Cel	8GX8	8G	-40 Cel		BOTTOM	R-PBGA-B								68719476736 bit
THGBMHG6C1LBAU6	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words				8	GRID ARRAY					105 Cel	8GX8	8G	-40 Cel		BOTTOM	R-PBGA-B153								68719476736 bit
THGBMHG9C8LBAAG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		68719476736 words				8	GRID ARRAY					85 Cel	64GX8	64G	-40 Cel		BOTTOM	R-PBGA-B								549755813888 bit
THGBMHG8C4LBAAR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		34359738368 words				8	GRID ARRAY					85 Cel	32GX8	32G	-40 Cel		BOTTOM	R-PBGA-B								274877906944 bit
THGBMHG9C4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				68719476736 words				8	GRID ARRAY					85 Cel	64GX8	64G	-25 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
THGBMHG8C4LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				34359738368 words				8	GRID ARRAY					105 Cel	32GX8	32G	-40 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG7C2LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				17179869184 words				8	GRID ARRAY					105 Cel	16GX8	16G	-40 Cel		BOTTOM	R-PBGA-B153								137438953472 bit
THGBMHG8C2LBAILH40	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		34359738368 words		NAND+FLASH		8	GRID ARRAY					85 Cel	32GX8	32G	-25 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG7C2LBAAR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		17179869184 words				8	GRID ARRAY					85 Cel	16GX8	16G	-40 Cel		BOTTOM	R-PBGA-B								137438953472 bit
THGBMGT0U8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				137438953472 words				8	GRID ARRAY					85 Cel	128GX8	128G	-25 Cel		BOTTOM	R-PBGA-B153								1099511627776 bit
THGBMHT0C8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				137438953472 words				8	GRID ARRAY					85 Cel	128GX8	128G	-25 Cel		BOTTOM	R-PBGA-B153								1099511627776 bit
THGBMHG9C8LBAWG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		68719476736 words				8	GRID ARRAY					85 Cel	64GX8	64G	-40 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
MC-22107F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			70 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00002 Amp		100 ns
MC-22104F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL			70 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00002 Amp		100 ns
MC-22000F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID		BALL			70 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs			85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM								Not Qualified				e0				.000002 Amp		100 ns
MC-22005F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID		BALL			75 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs			85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM								Not Qualified				e0				.00002 Amp		100 ns
MC-22102F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID		BALL			75 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs			85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM								Not Qualified				e0				.000002 Amp		100 ns
MC-22007F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID		BALL			75 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs			85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM								Not Qualified				e0				.00002 Amp		100 ns
MC-22100F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID		BALL			75 mA			FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs			85 Cel			-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM								Not Qualified				e0				.000002 Amp		100 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.