100 A Insulated Gate Bipolar Transistors (IGBT) 278

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXYH30N170C

Littelfuse

N-CHANNEL

SINGLE

NO

937 W

100 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

327 ns

3

FLANGE MOUNT

175 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

49 ns

MG100Q2YS42

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

700 W

100 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

2

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

700 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

CM100RX-24T

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

565 W

100 A

PLASTIC/EPOXY

POWER CONTROL

200 ns

1.95 V

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

600 ns

-40 Cel

20 V

1000 ns

6.6 V

UPPER

R-PUFM-X23

ISOLATED

UL RECOGNIZED

NGTB50N65FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

6.5 V

MATTE TIN

e3

SIGC54T60R3EX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

VMAX016001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

108.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

FAST SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

NXH100T120L3Q0S1NG

Onsemi

N-CHANNEL

COMPLEX

NO

328 W

100 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

412 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

93 ns

FGH50T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

33 ns

FGH50T65UPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

100 A

PLASTIC/EPOXY

POWER CONTROL

77 ns

THROUGH-HOLE

RECTANGULAR

1

29 ns

185 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

25 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

101 ns

FGH50T65SQD-F155

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

119.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

33 ns

FGA5065ADF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

57.6 ns

FGA50T65SHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

319 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

90.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

FAST SWITCHING

e3

57.6 ns

NGTB50N60SWG

Onsemi

N-CHANNEL

NO

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

e3

NGTB50N60FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

NGTB50N60S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

341 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247AD

e3

139 ns

AFGH50T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

GENERAL PURPOSE

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AB

e3

33 ns

AEC-Q101

NGTB25N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

385 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

313 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

34 ns

NGTG50N60FLWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

NGTB30N60L2WG

Onsemi

N-CHANNEL

NO

225 W

100 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

MATTE TIN

e3

NGTB50N60FWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

TIN

e3

NGTB75N60SWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247AD

e3

150 ns

STGW50H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

91 ns

STGE50NC60WD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

343 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

STGY50NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

100 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

540 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

90 ns

STGW50H65F

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

STGW50NB60M

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

100 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

1005 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

1

Not Qualified

TO-247

75 ns

STGW50NC60W

STMicroelectronics

N-CHANNEL

SINGLE

NO

285 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

343 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

69 ns

STGW50NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

100 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e0

140 ns

STGE50NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

100 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

1

540 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

90 ns

STGYA50H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

535 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

338 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

e3

63 ns

STGYA50M120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

535 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

54 ns

IRG5K100PM06F

Infineon Technologies

N-Channel

100 A

2.1 V

260 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

125000 ns

IRGKI0100M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

100 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IGW60T120

Infineon Technologies

N-CHANNEL

SINGLE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

730 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

95 ns

IKY50N120CH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

652 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

462 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

62 ns

IRG5U100HH06E

Infineon Technologies

N-Channel

100 A

920 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

100000 ns

FF75R12YT3ENG

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

710 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

108 ns

IRGNI0100M12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN CONFIGURABLE DIODE

NO

100 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

IRG5K100HF12B

Infineon Technologies

N-Channel

100 A

2.6 V

610 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

85000 ns

IRG5U100HF12A

Infineon Technologies

N-Channel

100 A

3.5 V

795 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

ISOLATED

120000 ns

BSM50GD170DL

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

480 W

100 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

6

930 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

IRG8P60N120KD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

420 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

70 ns

IFS100S12N3T4-B11

Infineon Technologies

455 W

100 A

2.1 V

1

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

IGC114T170S8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

Not Qualified

IRG5K100FF06E

Infineon Technologies

N-Channel

100 A

2.1 V

575 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

5.5 V

ISOLATED

125000 ns

F4-100R17N3E4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

100 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

697 ns

28

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-XUFM-X28

ISOLATED

233 ns

IEC-61140; UL RECOGNIZED

IKQ50N120CT2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

652 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

79 ns

IGP50N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

333 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

e3

60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.