Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
416 W |
100 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
79 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
MOTOR CONTROL |
NO LEAD |
SQUARE |
1 |
830 ns |
10 |
UNCASED CHIP |
150 Cel |
SILICON |
1700 V |
UPPER |
S-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
470 ns |
10 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
S-XUUC-N10 |
INTEGRATED GATE RESISTOR |
240 ns |
|||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
610 ns |
UNCASED CHIP |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
UPPER |
R-XUUC-N |
Not Qualified |
e3 |
330 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
610 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
330 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
480 ns |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
S-XUUC-N |
Not Qualified |
INTEGRATED GATE RESISTOR |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
79 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
536 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
474 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.8 V |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
133 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
451 ns |
10 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
S-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
274 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
333 W |
100 A |
2.3 V |
297 ns |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
54 ns |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUUC-N |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
235 ns |
10 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
S-XUUC-N10 |
125 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
100 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
540 ns |
10 |
UNCASED CHIP |
150 Cel |
SILICON |
600 V |
UPPER |
S-XUUC-N10 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
100 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
333 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
396 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
260 |
60 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
100 A |
UNSPECIFIED |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
297 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
54 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
100 A |
UNSPECIFIED |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
515 W |
100 A |
UNSPECIFIED |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
570 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
1240 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
280 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
340 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
530 ns |
21 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
310 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
275 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
302 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
UL APPROVED |
|||||||||||||||||||||
Infineon Technologies |
1000 W |
100 A |
2.8 V |
1 |
Insulated Gate BIP Transistors |
1200 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
330 W |
100 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
1000 W |
100 A |
3.3 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1000 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
800 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
470 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
297 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
54 ns |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
417 ns |
31 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
UL RECOGNIZED |
221 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
6 |
413 ns |
28 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
221 ns |
IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
515 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
25 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X25 |
ISOLATED |
185 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
350 W |
100 A |
UNSPECIFIED |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||
Infineon Technologies |
625 W |
100 A |
1 |
Insulated Gate BIP Transistors |
150 Cel |
1600 V |
20 V |
||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
335 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
500 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL APPROVED |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
140 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
417 ns |
31 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
UL RECOGNIZED |
221 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
275 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
302 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
600 W |
100 A |
2.3 V |
1 |
Insulated Gate BIP Transistors |
175 Cel |
1700 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
500 W |
100 A |
UNSPECIFIED |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
390 ns |
39 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X39 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
NO |
330 W |
100 A |
56 ns |
46 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
180 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
335 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
960 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
4.7 V |
UNSPECIFIED |
RECTANGULAR |
6 |
515 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X23 |
NOT SPECIFIED |
NOT SPECIFIED |
141 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
100 A |
2 V |
810 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
4.9 V |
ISOLATED |
125000 ns |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
NO |
100 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
34 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
340 ns |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
355 W |
100 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.