100 A Insulated Gate Bipolar Transistors (IGBT) 278

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MG100H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT				SILICON	500 V					UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					800 ns
MG100J7KS50	Toshiba			NO	300 W	100 A	UNSPECIFIED			2.5 V	UNSPECIFIED	RECTANGULAR	1			22	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V			UPPER	R-XUFM-X22		Not Qualified
MG100J6ES91	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			100 A							6								SILICON	600 V								Not Qualified
MG100H1BS1	Toshiba	N-CHANNEL	SINGLE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		800 ns	3	FLANGE MOUNT				SILICON	500 V					UPPER	R-PUFM-X3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING					800 ns
MG100Q1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	670 W	100 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	670 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	240
MBM100GS12AW	Renesas Electronics				600 W	100 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
RJP65S04DWA-80#W0	Renesas Electronics	N-CHANNEL		YES		100 A												Insulated Gate BIP Transistors		150 Cel		650 V		30 V	6.8 V									NOT SPECIFIED	NOT SPECIFIED
RBN50H65T1FPQ-A0#CB0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		133 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		30 V	5.9 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	38 ns
RJP65S04DWT-80#X0	Renesas Electronics	N-CHANNEL		YES		100 A												Insulated Gate BIP Transistors		150 Cel		650 V		30 V	6.8 V									NOT SPECIFIED	NOT SPECIFIED
MBM100F12	Renesas Electronics					100 A				3 V			1					Insulated Gate BIP Transistors				1200 V		20 V
MBM100GR12	Renesas Electronics			NO	590 W	100 A	PLASTIC/EPOXY			2.8 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V			UPPER	R-PUFM-X7		Not Qualified
MBM100AS6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A		POWER CONTROL					2								SILICON	600 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
MBB100GS12A	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			100 A		POWER CONTROL					6								SILICON	1200 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
MBM100GR12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	1200 V					UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE					300 ns
MBB100AS6	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE			100 A		POWER CONTROL					6								SILICON	600 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					400 ns
MBB100GS12AW	Renesas Electronics				600 W	100 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
RJH65D27BDPQ-A0#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	100 A	PLASTIC/EPOXY	POWER CONTROL		1.65 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		30 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
RJP1CS04DWT-80#X0	Renesas Electronics	N-CHANNEL				100 A												Insulated Gate BIP Transistors		150 Cel		1250 V		30 V										NOT SPECIFIED	NOT SPECIFIED
MBM100GS12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A		POWER CONTROL					2								SILICON	1200 V							ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY					350 ns
MBB100A6	Renesas Electronics					100 A				3 V			1					Insulated Gate BIP Transistors				600 V		20 V
RJH65S04DPQ-A0	Renesas Electronics	N-CHANNEL		NO	378 W	100 A												Insulated Gate BIP Transistors		150 Cel		650 V		30 V	6.8 V
RJP1CS04DWA-80#W0	Renesas Electronics	N-CHANNEL				100 A												Insulated Gate BIP Transistors		150 Cel		1250 V		30 V										NOT SPECIFIED	NOT SPECIFIED
MBM100A6	Renesas Electronics					100 A				3 V			1					Insulated Gate BIP Transistors				600 V		20 V
MUBW75-06A8	Littelfuse	N-CHANNEL	COMPLEX	NO	320 W	100 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	6		490 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	600 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24	ISOLATED	Not Qualified			e3			210 ns	UL RECOGNIZED
IXGQ100N60Y4	Littelfuse				400 W	100 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
IXGQ100N100Y3	Littelfuse				400 W	100 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V		20 V
IXGQ100N50Y4	Littelfuse				400 W	100 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		500 V		20 V
VIE100-12S4	Littelfuse	N-CHANNEL	COMPLEX	NO	625 W	100 A	CERAMIC, METAL-SEALED COFIRED	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	2			10	FLANGE MOUNT	Insulated Gate BIP Transistors	625 W	150 Cel	SILICON	1200 V					UPPER	R-CUFM-X10	ISOLATED	Not Qualified	INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE			NOT SPECIFIED	NOT SPECIFIED
MKI65-06A7T	Littelfuse	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		100 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	4		490 ns	14	FLANGE MOUNT			150 Cel	SILICON	600 V					UPPER	R-XUFM-X14	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	210 ns	UL RECOGNIZED
MKI65-06A7	Littelfuse	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		100 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	4		490 ns	14	FLANGE MOUNT			150 Cel	SILICON	600 V					UPPER	R-XUFM-X14	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	210 ns	UL RECOGNIZED
IXYK30N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	100 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		327 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				49 ns
IXGN75N60B	Littelfuse	N-CHANNEL	SINGLE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT				SILICON	600 V				NICKEL	UPPER	R-PUFM-X4		Not Qualified
IXDN55N120	Littelfuse	N-CHANNEL	SINGLE	NO	450 W	100 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		570 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V	6.5 V	NICKEL	UPPER	R-XUFM-X4	ISOLATED	Not Qualified						170 ns	UL RECOGNIZED
MG0675S-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	2		310 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X7	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	45 ns	UL RECOGNIZED
IXYH30N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				57 ns
IXYX30N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	100 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		327 ns	3	IN-LINE			175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	COLLECTOR							49 ns
IXYH50N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	100 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	96 ns
IXXH50N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	69 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.