115 W Insulated Gate Bipolar Transistors (IGBT) 33

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGAF40N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

17 ns

132 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

37 ns

FB30R06W1E3ENG

Infineon Technologies

N-Channel

115 W

39 A

2 V

245 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

ISOLATED

42 ns

FB30R06W1E3_B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

39 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X22

1

Not Qualified

260

42 ns

STGP15H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

34 ns

STGP10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

STGP10H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

214 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

26.8 ns

NGD18N40CLBT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5200 ns

NGB18N40CLBT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5200 ns

NGD8201N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

14000 ns

GULL WING

RECTANGULAR

1

7000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

435 V

15 V

2.3 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

11000 ns

NGD18N40CLB

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

5200 ns

NGB8204ANT4G

Onsemi

N-CHANNEL

YES

115 W

18 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

1.9 V

MATTE TIN

e3

NGB8204NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5200 ns

NGD18N45CLBT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

9000 ns

GULL WING

RECTANGULAR

1

7000 ns

5400 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

500 V

18 V

1.9 V

MATTE TIN

SINGLE

R-PSSO-G2

3

COLLECTOR

e3

30

260

2920 ns

NGD18N40ACLBT4G

Onsemi

N-CHANNEL

YES

115 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

2.1 V

MATTE TIN

1

e3

30

260

NGD8201BNT4G

Onsemi

N-CHANNEL

YES

115 W

15 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

1.8 V

Matte Tin (Sn) - annealed

1

e3

30

260

NGB8204NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5200 ns

NGB18N40ACLBT4G

Onsemi

N-CHANNEL

YES

115 W

18 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

430 V

18 V

1.9 V

MATTE TIN

e3

NGD8201NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

14000 ns

GULL WING

RECTANGULAR

1

7000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.3 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

6500 ns

NGD18N40CLBT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

5200 ns

NGB18N40CLBT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

430 V

18 V

1.9 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

5200 ns

STGB15H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

34 ns

STGB10H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

214 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

26.8 ns

STGWT15H60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

115 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

34 ns

STGB10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

260 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

FP30R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

FP30R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL RECOGNIZED

SP000790722

Infineon Technologies

N-Channel

115 W

37 A

2 V

245 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

ISOLATED

42 ns

IRG7PH28UD1PBF

Infineon Technologies

N-CHANNEL

NO

115 W

30 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

6 V

IRG7PH28UD1MPBF

Infineon Technologies

N-CHANNEL

NO

115 W

30 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

6 V

LGB8204ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGD18N45TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

9000 ns

2.85 V

GULL WING

RECTANGULAR

1

7000 ns

5400 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

10400 ns

-55 Cel

18 V

19000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

2920 ns

AEC-Q101

LGB18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGD18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.