200 W Insulated Gate Bipolar Transistors (IGBT) 197

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGP30NC60W	STMicroelectronics	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		189 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e3			42.5 ns
STGB20NB37LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		15000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON					2 V	MATTE TIN	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified			e3			2900 ns
IRGVH50FU	Infineon Technologies	N-CHANNEL		NO	200 W	45 A												Insulated Gate BIP Transistors		150 Cel		1200 V				6 V	Tin/Lead (Sn/Pb)							e0
BSM25GD120D2	Infineon Technologies				200 W	35 A				3.2 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
F4-50R07W1H3_B11A	Infineon Technologies	N-CHANNEL	COMPLEX	NO	200 W	55 A	UNSPECIFIED	POWER CONTROL		1.85 V	UNSPECIFIED	RECTANGULAR	4		203 ns	20	FLANGE MOUNT			150 Cel	SILICON	650 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	32 ns	UL APPROVED
BSM50GD60DN2	Infineon Technologies				200 W	50 A				2.7 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
FS35R12KE3G	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	200 W	55 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	6		610 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X28	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
IRGVH50FD	Infineon Technologies	N-CHANNEL		NO	200 W	45 A												Insulated Gate BIP Transistors		150 Cel		1200 V				6 V	Tin/Lead (Sn/Pb)							e0
IRGIH50FD	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	45 A	METAL				PIN/PEG	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V				6 V	TIN LEAD	SINGLE	R-MSFM-P3	ISOLATED	Not Qualified	FAST	TO-259AA	e0
BSM50GD60DN2E3226	Infineon Technologies				200 W	50 A				2.7 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
BSM25GB120DN2	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	25 A	UNSPECIFIED			3 V	UNSPECIFIED	RECTANGULAR	2		470 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
BUP313D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	32 A	PLASTIC/EPOXY	MOTOR CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	95 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED	TO-218	e3			70 ns
BUP403	Infineon Technologies	N-CHANNEL		NO	200 W				120 ns					700 ns				Insulated Gate BIP Transistors		150 Cel		600 V		20 V		6.5 V	Tin/Lead (Sn/Pb)							e0
IRGMIC50UD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	45 A	METAL				PIN/PEG	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V				5.5 V	TIN LEAD	SINGLE	R-MSFM-P3	ISOLATED	Not Qualified	ULTRA FAST	TO-259AA	e0
IRGMIC50UU	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	45 A	METAL				PIN/PEG	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V				5.5 V	TIN LEAD	SINGLE	R-MSFM-P3	ISOLATED	Not Qualified	ULTRA FAST	TO-259AA	e0
BUP213	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	32 A	PLASTIC/EPOXY	MOTOR CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	95 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED	TO-220AB	e3			70 ns
IRGIH50FU	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	45 A	METAL				PIN/PEG	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V				6 V	TIN LEAD	SINGLE	R-MSFM-P3	ISOLATED	Not Qualified	FAST	TO-259AA	e0
BSM25GD120DLCE3224	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	50 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	6		380 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns
FS35R12KE3	Infineon Technologies				200 W	35 A				2.2 V			1					Insulated Gate BIP Transistors		125 Cel		1200 V		20 V
BSM25GD120DN2	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	6		450 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
SP001541548	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	70 A	PLASTIC/EPOXY	POWER CONTROL		1.36 V	THROUGH-HOLE	RECTANGULAR	1	600 ns	1050 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	1580 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				63 ns
SP001533562	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	57 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1	638 ns	1270 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	1906 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				61 ns
SP001537164	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	55 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1	86 ns	177 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	266 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				79 ns
SP001536024	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	55 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	214 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	340 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				71 ns
SP001540572	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	52 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	140 ns	245 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				112 ns
SP001379684	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	53 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		279 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V		SINGLE	R-PSFM-T3				TO-247				38 ns
SP001533582	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	260 ns	3	FLANGE MOUNT			150 Cel	SILICON	900 V	-55 Cel	20 V	390 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247AC				55 ns
SP001547878	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	55 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	130 ns	258 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	390 ns	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				52 ns
IRG4PH50KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	45 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	660 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			64 ns
FP40R12KE3G	Infineon Technologies	N-CHANNEL	COMPLEX	NO	200 W	55 A	UNSPECIFIED			2.3 V	UNSPECIFIED	RECTANGULAR	7		610 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X35	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	135 ns
IGW30N60TP	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	53 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		279 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3				TO-247	e3			38 ns
IKW30N60DTP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	53 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		279 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3				TO-247	e3			38 ns
IRGP6640D-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	53 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	50 ns
IRGP6640DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	53 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC		NOT SPECIFIED	NOT SPECIFIED	50 ns
IRG4PC50UPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	55 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	130 ns	258 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	-55 Cel	20 V	390 ns	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AC	e3			52 ns
IRG4PC50S-PPBF	Infineon Technologies	N-CHANNEL		NO	200 W	41 A												Insulated Gate BIP Transistors		150 Cel		600 V		20 V		6 V	Matte Tin (Sn) - with Nickel (Ni) barrier							e3
IKW15N120BH6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		373 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-40 Cel	20 V		6.3 V	TIN	SINGLE	R-PSFM-T3				TO-247	e3			46 ns
FP40R12KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	200 W	55 A	UNSPECIFIED	POWER CONTROL		2.3 V	WIRE	RECTANGULAR	7		610 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-W24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
MIG50J806EA	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG25Q6ES51	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
GT25Q301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	25 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	680 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
GT25Q102	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	25 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	680 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	HIGH SPEED		e0			300 ns
MIG50J906EA	Toshiba				200 W	50 A				2.8 V			3					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
MG75J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	200 W	75 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X3	ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MIG50J806H	Toshiba	N-CHANNEL	COMPLEX	NO	200 W	75 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	PIN/PEG	RECTANGULAR	6		500 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-P24	ISOLATED	Not Qualified						300 ns
MIG50J906H	Toshiba			NO	200 W	50 A	UNSPECIFIED			2.7 V	UNSPECIFIED	RECTANGULAR	1			24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V		20 V				UPPER	R-XUFM-X24		Not Qualified
GT80J101A	Toshiba	N-CHANNEL	SINGLE	NO	200 W	80 A	PLASTIC/EPOXY	POWER CONTROL	600 ns		THROUGH-HOLE	RECTANGULAR	1	400 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	TIN LEAD	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified			e0			500 ns
MG25Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	200 W	35 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	6	300 ns	600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X17	ISOLATED	Not Qualified	HIGH SPEED					150 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.