COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 110

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BTS7904BATMA1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	160 A	200 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0202 ohm	40 A	SINGLE	R-PSSO-G5		DRAIN			TO-263
BTS7904B	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	160 A	200 mJ	40 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0202 ohm	40 A	SINGLE	R-PSSO-G5	1	DRAIN	Not Qualified		TO-263	e3		245
ITD50N04S4L07ATMA1	Infineon Technologies	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	200 A	45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0072 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN			TO-252	e3				AEC-Q101
ITD50N04S4L-07	Infineon Technologies	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	200 A	45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0072 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN			TO-252	e3				AEC-Q101
BTS7904BTR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	160 A	200 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0202 ohm	40 A	SINGLE	R-PSSO-G5		DRAIN			TO-263
BTS7904SAKSA1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	160 A	200 mJ		5	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.0205 ohm	40 A	SINGLE	R-PSFM-T5
BTS7904S	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	160 A	200 mJ	40 A	5	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0205 ohm	40 A	SINGLE	R-PSFM-T5	1		Not Qualified			e3		245
IRF6723M2DTRPBF	Infineon Technologies	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	25 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	130 A	71 mJ	47 A	4	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN SILVER COPPER	.0066 ohm	15 A	BOTTOM	R-XBCC-N4	1	DRAIN	Not Qualified			e1
IRF6156	Infineon Technologies	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	RECTANGULAR	ENHANCEMENT MODE	2				6	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.04 ohm		BOTTOM	R-PBGA-B6			Not Qualified				40	260
IRF7389	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.029 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY, AVALANCHE RATED	MS-012AA	e0
IRF7379	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	46 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.045 ohm	5.8 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA
IRF9395MTR1PBF	Infineon Technologies	P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	110 A		75 A	6	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.007 ohm	14 A	BOTTOM	R-XBCC-N6	1	DRAIN	Not Qualified			e3
IRF6702M2DTR1PBF	Infineon Technologies	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	130 A	71 mJ		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.0066 ohm	15 A	BOTTOM	R-XBCC-N4		DRAIN	Not Qualified
IRF7389PBF-1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.029 ohm		DUAL	R-PDSO-G8	1				MS-012AA
BSZ15DC02KDH	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	11 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.055 ohm	5.1 A	DUAL	S-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3				AEC-Q101
IRF7389PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ	7.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.029 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
IRF7379PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	46 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		-55 Cel			.045 ohm	5.8 A	DUAL	R-PDSO-G8				AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF9395MTRPBF	Infineon Technologies	P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	110 A		75 A	6	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.007 ohm	14 A	BOTTOM	R-XBCC-N6	1	DRAIN	Not Qualified			e3	40	260
DMN2024UTS-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	45 A	8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G8						e3	30	260	38 pF	MIL-STD-202
DMC3025LNS-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	45 A	9.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.035 ohm	7.2 A	DUAL	S-PDSO-F8	1					e3	30	260	57 pF	MIL-STD-202
DMN2022UNS-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	2	60 A	14.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	10.7 A	DUAL	S-PDSO-F8						e3		260	160 pF	MIL-STD-202
DMC3016LNS-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	55 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.02 ohm	9 A	DUAL	S-PDSO-F8	1					e3	30	260	107 pF	MIL-STD-202
DMC3016LNS-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	55 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.02 ohm	9 A	DUAL	S-PDSO-F8	1					e3	30	260	107 pF	MIL-STD-202
DMN3006SCA6-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	80 A			6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.009 ohm	11.5 A	BOTTOM	R-XBCC-N6	1	SOURCE				e4			274 pF	MIL-STD-202
DMN15M5UCA6-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	UNSPECIFIED	SWITCHING	12 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	90 A			6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.01 ohm	11.5 A	BOTTOM	R-XBCC-N6	1					e4			12 pF	MIL-STD-202
DMC3025LNS-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	45 A	9.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.035 ohm	7.2 A	DUAL	S-PDSO-F8	1					e3	30	260	57 pF	MIL-STD-202
DMN2041UVT-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.44 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	5.8 A	DUAL	R-PDSO-G6						e3		260	79 pF	MIL-STD-202
DMC3021LK4-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	22 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		14 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.021 ohm	6.7 A	SINGLE	R-PSSO-G4	1			HIGH RELIABILITY		e3	30	260
DMN2028UFDH-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	40 A		6.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.036 ohm	6.8 A	DUAL	R-PDSO-N8	1					e3	30	260		AEC-Q101
DMN1002UCA6-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.47 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	4787 ns	-55 Cel	10255 ns	NICKEL PALLADIUM GOLD			BOTTOM	R-XBCC-N6		SOURCE		ESD PROTECTED		e4		260	297 pF
DMN2041UVT-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.44 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	5.8 A	DUAL	R-PDSO-G6						e3		260	79 pF	MIL-STD-202
DMG4511SK4-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	50 A		8.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.035 ohm	5.3 A	SINGLE	R-PSSO-G4	1			HIGH RELIABILITY	TO-252	e3	30	260
DMN11M2UCA14-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.3 W	UNSPECIFIED	SWITCHING	12 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	80 A			14	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL GOLD	.0034 ohm	25.5 A	BOTTOM	R-XBCC-N14						e4		260	304 pF	MIL-STD-202
DMN3003LCA8-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				8	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0051 ohm		BOTTOM	R-XBCC-N8									160 pF	MIL-STD-202
DMN2030UCA4-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2				4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL GOLD	.05 ohm		BOTTOM	S-XBCC-N4						e4			54 pF	MIL-STD-202
DMN2009UCA4-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2				4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL GOLD	.0226 ohm		BOTTOM	S-XBCC-N4						e4			107 pF	MIL-STD-202
UPA2353T1G-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2				4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified			e6
UPA2351T1P-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2				4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified			e6
UPA1873GR-9JG	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.029 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA1872BGR-9JG-E1	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.018 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified
FY6BGH-02F	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.025 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified
UPA1872BGR-9JG-E1-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH	.018 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified			e6
UPA1872BGR-9JG-E2-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN BISMUTH	.018 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified			e6	NOT SPECIFIED	NOT SPECIFIED
UPA1872BGR-9JG-E2	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.018 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified
UPA1874BGR-9JG	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0195 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA1872GR-9JG	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.018 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified
UPA1874BGR-9JG-E2	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0195 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified
UPA1874BGR-9JG-E2-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH	.0195 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified			e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.