Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPG20N04S4L08ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	145 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0082 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
IRFS4615TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	109 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.042 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRL520NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	85 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	50 pF
IRL530NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	150 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.12 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e3	30	260
BSC077N12NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	120 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	392 A	330 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0077 ohm	13.4 A	DUAL	R-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED
BSP170PL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A	70 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.3 ohm	1.9 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3				AEC-Q101
IPB020N10N5LF	Infineon Technologies																									TIN					1					e3
IPB065N15N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	520 A	780 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0065 ohm	130 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3
IRL530NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	63 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	150 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.12 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY	TO-220AB	e3	30	260
BSP88H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	40	260		AEC-Q101
IPB107N20NAATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	352 A	560 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0107 ohm	88 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
BSC076N06NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	47 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0076 ohm	14 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
IGOT60R070D1AUMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	125 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		31 A	20	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE		-55 Cel		TIN	.07 ohm	31 A	DUAL	R-PDSO-G20	3					e3		260	.3 pF
BSB008NE2LX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	600 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		SILVER NICKEL	.0008 ohm	180 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified	ULTRA LOW RESISTANCE		e4
BSC060P03NS3EGATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	149 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	231 ns	-55 Cel	150 ns	TIN	.006 ohm	17.7 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3			220 pF
BSP317PL6327XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.72 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					4 ohm	.43 A	DUAL	R-PDSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
BTS282ZE3180AATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	YES		PLASTIC/EPOXY	SWITCHING	49 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	2000 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0095 ohm	80 A	SINGLE	R-PSSO-G7		DRAIN		AVALANCHE RATED		e3				AEC-Q101
BSC360N15NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	132 A	80 mJ	33 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.036 ohm	33 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
BSL606SNH6327TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18.1 A	14 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.06 ohm	4.5 A	DUAL	R-PDSO-G6				AVALANCHE RATED, LOGIC LEVEL COMPATIBLE						AEC-Q101
BSP149L6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	2.6 A		.66 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.8 ohm	.66 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	40	260
IPB083N10N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0083 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPD70P04P4L08ATMA2	Infineon Technologies																									TIN					1					e3
IRF6665TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A	11 mJ	19 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.062 ohm	4.2 A	BOTTOM	R-XBCC-N2	1	DRAIN	Not Qualified	HIGH RELIABILITY		e1	30	260
SPD04N80C3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	170 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	1.3 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3
BSP149L6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	2.6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.8 ohm	.66 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e3
BSZ068N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	43 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0068 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			38 pF
IPB019N08N3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	1430 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0019 ohm	180 A	SINGLE	R-PSSO-G6		DRAIN
BSP295E6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A		1.8 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.5 ohm	1.8 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE				260
IRFH3707TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	96 A	13 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0124 ohm	12 A	DUAL	S-PDSO-N3	1	DRAIN	Not Qualified
IRFZ24NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.07 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	65 pF
IPG20N04S4L11AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0116 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE		e3
JANTX2N6782	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/556
IPB108N15N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	330 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0108 ohm	83 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRF3415PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	590 mJ	43 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.042 ohm	43 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	250
BSP135H6906XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.48 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	45 ohm	.12 A	DUAL	R-PDSO-G4	1	DRAIN				e3				AEC-Q101
IRF7769L1TRPBFTR	Infineon Technologies
IRF9335TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A	98 mJ	5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.059 ohm	5.4 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	40	260
AUIRFR4620TRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	113 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.078 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY	TO-252AA	e3	30	260
BSC080P03LSGAUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	248 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.008 ohm	16 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
BSP299H6327XUSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	130 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	4 ohm	.4 A	DUAL	R-PDSO-G4	3	DRAIN		AVALANCHE RATED		e3	40	260		AEC-Q101
BSZ097N10NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0097 ohm	8 A	DUAL	S-PDSO-N8	1	DRAIN				e3
BSZ120P03NS3GATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	160 A	73 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.02 ohm	11 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3
IPB60R060P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	151 A	159 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.06 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPP60R190C6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	59 A	418 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.19 ohm	20.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IRFS4620TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	113 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0775 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
SPA11N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	470 mJ	5.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.45 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
AUIRFR3710ZTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	200 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.018 ohm	42 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA		NOT SPECIFIED	NOT SPECIFIED
BSZ100N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	19 mJ		8	POST/STUD MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.01 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			32 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.