Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1250 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
590 A |
295 A |
32 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.009 ohm |
295 A |
UPPER |
R-XUFM-X32 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
625 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
300 A |
147 A |
23 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.017 ohm |
147 A |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
700 W |
UNSPECIFIED |
SWITCHING |
1700 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
200 A |
100 A |
12 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.035 ohm |
100 A |
UPPER |
R-XUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
381 W |
PLASTIC/EPOXY |
SWITCHING |
3300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.105 ohm |
41 A |
SINGLE |
R-PSFM-T4 |
DRAIN |
TO-247 |
4 pF |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
2031 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
990 A |
495 A |
9 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.0052 ohm |
495 A |
UPPER |
R-XUFM-X9 |
ISOLATED |
|||||||||||||||||||||||||
|
Microchip Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
1300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.78 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AD |
e1 |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
700 A |
3600 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.011 ohm |
175 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
HIGH VOLTAGE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
450 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
388 A |
2500 mJ |
97 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.022 ohm |
97 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
1875 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.63 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e3 |
||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
862 W |
PLASTIC/EPOXY |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
291 A |
1954 mJ |
97 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.041 ohm |
97 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED, ULTRA-LOW RESISTANCE |
TO-264AA |
NOT SPECIFIED |
NOT SPECIFIED |
550 pF |
|||||||||||||||||||||
|
Microchip Technology |
462 W |
1 |
95 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
95 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
800 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
232 A |
670 mJ |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.075 ohm |
56 A |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||
|
Microchip Technology |
250 W |
1 |
55 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
55 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
395 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
180 A |
89 A |
25 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.031 ohm |
89 A |
UPPER |
R-XUFM-X25 |
ISOLATED |
|||||||||||||||||||||||||
|
Microchip Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
QUAD |
R-PQSO-N32 |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
COMPLEX |
YES |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
8 |
32 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
QUAD |
R-PQSO-N32 |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
690 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
148 A |
3600 mJ |
37 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.21 ohm |
37 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
e1 |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 A |
2500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.5 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
HIGH VOLTAGE |
TO-264AA |
e1 |
||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
1300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.86 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247 |
e1 |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
520 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
232 A |
3000 mJ |
58 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.065 ohm |
58 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
e1 |
UL RECOGNIZED |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
570 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
228 A |
2500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Pure Matte Tin (Sn) |
.075 ohm |
57 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-264AA |
NOT SPECIFIED |
NOT SPECIFIED |
85 pF |
MIL-STD-750 |
|||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
SWITCHING |
800 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
112 A |
670 mJ |
10 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.15 ohm |
28 A |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
ULTRA-LOW RESISTANCE, AVALANCHE RATED |
e1 |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.5 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
175 ns |
MATTE TIN |
8 ohm |
.3 A |
SINGLE |
R-PSSO-G2 |
3 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
260 |
110 pF |
|||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
370 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
222 A |
89 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
TIN |
.031 ohm |
89 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-268AA |
e3 |
||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
182 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
87 A |
35 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.1 ohm |
35 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-268AA |
9 pF |
|||||||||||||||||||||||
|
Microchip Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
278 W |
PLASTIC/EPOXY |
SWITCHING |
1700 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.045 ohm |
59 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-268AA |
10 pF |
||||||||||||||||||||||||
Microchip Technology |
||||||||||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
SINGLE |
NO |
60 W |
ENHANCEMENT MODE |
1 |
9.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
9.2 A |
e0 |
|||||||||||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
SINGLE |
NO |
43 W |
ENHANCEMENT MODE |
1 |
4.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
4.9 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
3600 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.06 ohm |
70 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
1 A |
.35 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
30 ns |
MATTE TIN |
10 ohm |
.35 A |
SINGLE |
R-PSSO-G2 |
3 |
DRAIN |
LOW THRESHOLD |
TO-252AA |
e3 |
260 |
25 pF |
||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
208 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
105 A |
53 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.05 ohm |
53 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
17 pF |
||||||||||||||||||||||
|
Microchip Technology |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1067 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 A |
254 A |
25 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.0104 ohm |
254 A |
UPPER |
R-XUFM-X25 |
ISOLATED |
|||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
745 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
350 A |
173 A |
25 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.016 ohm |
173 A |
UPPER |
R-XUFM-X25 |
ISOLATED |
|||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.3 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
.26 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
52 ns |
MATTE TIN |
5 ohm |
.26 A |
SINGLE |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
40 |
260 |
15 pF |
||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ns |
-55 Cel |
50 ns |
MATTE TIN |
.3 ohm |
8 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
TO-243AA |
e3 |
260 |
30 pF |
||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
1000 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
580 A |
3200 mJ |
2 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.078 ohm |
145 A |
UPPER |
R-PUFM-X2 |
1 |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
15 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ns |
-55 Cel |
35 ns |
MATTE TIN |
25 ohm |
.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
5 pF |
||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
370 W |
PLASTIC/EPOXY |
SWITCHING |
700 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
315 A |
126 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.019 ohm |
126 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-268AA |
29 pF |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
303 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
159 A |
64 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.05 ohm |
64 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-268AA |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.5 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
50 ns |
MATTE TIN |
7 ohm |
.316 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
FAST SWITCHING |
TO-243AA |
e3 |
40 |
260 |
23 pF |
TS 16949 |
||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
350 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
75 ns |
MATTE TIN |
15 ohm |
.231 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
TO-243AA |
e3 |
25 pF |
|||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ns |
-55 Cel |
50 ns |
MATTE TIN |
.6 ohm |
1.1 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
FAST SWITCHING |
TO-243AA |
e3 |
260 |
60 pF |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.