Microchip Technology Power Field Effect Transistors (FET) 143

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

APTMC120AM09CT3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

590 A

295 A

32

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.009 ohm

295 A

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

APTMC120TAM17CTPAG

Microchip Technology

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

300 A

147 A

23

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.017 ohm

147 A

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

APTMC170AM30CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 W

UNSPECIFIED

SWITCHING

1700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

200 A

100 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.035 ohm

100 A

UPPER

R-XUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

MSC080SMA330B4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

381 W

PLASTIC/EPOXY

SWITCHING

3300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.105 ohm

41 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

4 pF

MSCSM120AM042CT6AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

2031 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

990 A

495 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0052 ohm

495 A

UPPER

R-XUFM-X9

ISOLATED

MSCSM120DUM16T3AG

Microchip Technology

APT10078BFLLG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

1300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.78 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e1

APT20M11JVR

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

700 A

3600 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.011 ohm

175 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH VOLTAGE

NOT SPECIFIED

NOT SPECIFIED

APT20M22JVRU3

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

388 A

2500 mJ

97 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

97 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

APT24M120L

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1875 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.63 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e3

APT97N65LC6

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

862 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

291 A

1954 mJ

97 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.041 ohm

97 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-264AA

NOT SPECIFIED

NOT SPECIFIED

550 pF

APTC60DSKM24T3G

Microchip Technology

462 W

1

95 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

95 A

NOT SPECIFIED

NOT SPECIFIED

APTC80AM75SCG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

232 A

670 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.075 ohm

56 A

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

APTMC60TLM55CT3AG

Microchip Technology

250 W

1

55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

MSCSM120HM31CT3AG

Microchip Technology

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

395 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

180 A

89 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.031 ohm

89 A

UPPER

R-XUFM-X25

ISOLATED

MSCSM70DUM07T3AG

Microchip Technology

PD70224LILQ

Microchip Technology

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

QUAD

R-PQSO-N32

PD70224LILQ-TR

Microchip Technology

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

8

32

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

QUAD

R-PQSO-N32

APT10021JLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

690 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

148 A

3600 mJ

37 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.21 ohm

37 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

APT10050LVRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.5 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

HIGH VOLTAGE

TO-264AA

e1

APT10086BVRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

1300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.86 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e1

APT50M65JFLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

232 A

3000 mJ

58 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.065 ohm

58 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

UL RECOGNIZED

APT50M75LLLG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

570 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Pure Matte Tin (Sn)

.075 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

TO-264AA

NOT SPECIFIED

NOT SPECIFIED

85 pF

MIL-STD-750

APTC80A15SCTG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

112 A

670 mJ

10

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.15 ohm

28 A

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

ULTRA-LOW RESISTANCE, AVALANCHE RATED

e1

DN3765K4-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

175 ns

MATTE TIN

8 ohm

.3 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

TO-252AA

e3

260

110 pF

MSC025SMA120S

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

370 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

222 A

89 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

TIN

.031 ohm

89 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

e3

MSC080SMA120S

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

182 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

87 A

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.1 ohm

35 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

9 pF

MSCSM70DUM017AG

Microchip Technology

MSC035SMA170S

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

278 W

PLASTIC/EPOXY

SWITCHING

1700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.045 ohm

59 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

10 pF

MSCSM70AM19T1AG

Microchip Technology

IRF521

Microchip Technology

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

9.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9.2 A

e0

IRF512

Microchip Technology

N-CHANNEL

SINGLE

NO

43 W

ENHANCEMENT MODE

1

4.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.9 A

e0

APT60M60JFLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

3600 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

70 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

DN2450K4-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

1 A

.35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

30 ns

MATTE TIN

10 ohm

.35 A

SINGLE

R-PSSO-G2

3

DRAIN

LOW THRESHOLD

TO-252AA

e3

260

25 pF

MSC040SMA120J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

105 A

53 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.05 ohm

53 A

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

17 pF

MSCSM120AM042CT6LIAG

Microchip Technology

MSCSM120DAM11CT3AG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1067 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

254 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0104 ohm

254 A

UPPER

R-XUFM-X25

ISOLATED

MSCSM120HM16CT3AG

Microchip Technology

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

745 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

350 A

173 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.016 ohm

173 A

UPPER

R-XUFM-X25

ISOLATED

TN2640LG-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

.26 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

52 ns

MATTE TIN

5 ohm

.26 A

SINGLE

R-PDSO-G8

1

Not Qualified

e3

40

260

15 pF

VN3205N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

50 ns

MATTE TIN

.3 ohm

8 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243AA

e3

260

30 pF

APTM100UM65SAG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

580 A

3200 mJ

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.078 ohm

145 A

UPPER

R-PUFM-X2

1

Not Qualified

AVALANCHE RATED

e1

DN2540N5-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

MATTE TIN

25 ohm

.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

5 pF

MSC015SMA070S

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

370 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

315 A

126 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.019 ohm

126 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

29 pF

MSC040SMA120S

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

303 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

159 A

64 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.05 ohm

64 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

TN5325N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

50 ns

MATTE TIN

7 ohm

.316 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

FAST SWITCHING

TO-243AA

e3

40

260

23 pF

TS 16949

TP2435N8-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

350 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

75 ns

MATTE TIN

15 ohm

.231 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

TO-243AA

e3

25 pF

VP3203N8-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

50 ns

MATTE TIN

.6 ohm

1.1 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

FAST SWITCHING

TO-243AA

e3

260

60 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.