Microchip Technology Power Field Effect Transistors (FET) 143

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

APT41F100J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

260 A

4075 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

42 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

APTMC120AM20CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

280 A

143 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.017 ohm

143 A

UPPER

R-XUFM-X12

ISOLATED

MSC040SMA120B4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

323 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

105 A

66 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.05 ohm

66 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

TC6215TG-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

APT8M100B

Microchip Technology

N-CHANNEL

SINGLE

NO

290 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

415 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.8 ohm

7.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING, AVALANCHE RATED

TO-247AB

e1

MSC130SM120JCU2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

745 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

350 A

173 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.016 ohm

173 A

UPPER

R-XUFM-X4

ISOLATED

MSCSM120AM31CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

395 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

180 A

89 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.031 ohm

89 A

UPPER

R-XUFM-X12

ISOLATED

TC2320TG-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

50 ns

MATTE TIN

7 ohm

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

23 pF

TC8220K6-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

NICKEL PALLADIUM GOLD

6 ohm

DUAL

S-PDSO-N12

Not Qualified

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

e4

2 pF

TN2504N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ns

-55 Cel

38 ns

MATTE TIN

1 ohm

.89 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-243AA

e3

40

260

25 pF

MSCSM170HM45CT3AG

Microchip Technology

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

130 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.045 ohm

64 A

UPPER

R-XUFM-X25

ISOLATED

10 pF

APT50M50JFLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

284 A

3200 mJ

71 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.05 ohm

71 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

UL RECOGNIZED

DN2450N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

DEPLETION MODE

1

.9 A

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

30 ns

MATTE TIN

10 ohm

.23 A

SINGLE

R-PSSO-F3

1

DRAIN

LOW THRESHOLD

TO-243AA

e3

40

260

25 pF

DN2470K4-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

75 ns

-55 Cel

90 ns

MATTE TIN

42 ohm

.17 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

TO-252AA

e3

260

25 pF

TS 16949

APT10045JLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

84 A

2500 mJ

21 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

21 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

APTMC120TAM12CTPAG

Microchip Technology

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

925 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

440 A

220 A

26

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.012 ohm

220 A

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

APT1001RBVRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e1

APTMC120AM55CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

110 A

55 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON CARBIDE

-40 Cel

.049 ohm

55 A

UPPER

R-XUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

TN2540N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

400 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

.26 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

45 ns

MATTE TIN

12 ohm

.26 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243AA

e3

260

25 pF

APTMC120AM12CT3AG

Microchip Technology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

925 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

440 A

220 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.012 ohm

220 A

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

APT50MC120JCU2

Microchip Technology

300 W

1

71 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

71 A

MSC400SMA330B4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

131 W

PLASTIC/EPOXY

SWITCHING

3300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-55 Cel

.52 ohm

11 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

2 pF

MSCSM70VM19C3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR

NO

365 W

UNSPECIFIED

SWITCHING

700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

250 A

124 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.019 ohm

124 A

UPPER

R-XUFM-X25

ISOLATED

29 pF

APT5010B2LLG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

1600 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.1 ohm

46 A

SINGLE

R-PSIP-T3

DRAIN

e1

NOT SPECIFIED

NOT SPECIFIED

APT8024JLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

116 A

2500 mJ

29 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.24 ohm

29 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

APT9F100B

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37 A

574 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.7 ohm

9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-247AD

e1

APTMC60TL11CT3AG

Microchip Technology

125 W

1

28 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

28 A

DN2625DK6-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

3.3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ns

-55 Cel

30 ns

MATTE TIN

3.5 ohm

1.1 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

LOW THRESHOLD

e3

70 pF

TC8020K6-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

6

56

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

NICKEL PALLADIUM GOLD

8 ohm

QUAD

S-XQCC-N56

e4

7 pF

TC8020K6-G-M937

Microchip Technology

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

6

56

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

8 ohm

QUAD

S-XQCC-N56

7 pF

APT43M60L

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

45 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-264AA

e3

TC7920K6-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

NICKEL PALLADIUM GOLD

10 ohm

DUAL

S-PDSO-N12

Not Qualified

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

e4

1.3 pF

APT10035JLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3000 mJ

25 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.35 ohm

25 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

160 pF

UL RECOGNIZED

APT60M75JVR

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

248 A

3600 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.075 ohm

62 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH VOLTAGE

NOT SPECIFIED

NOT SPECIFIED

APT77N60SC6

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

481 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

272 A

1954 mJ

77 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

177 ns

TIN

.041 ohm

77 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e3

290 pF

DN2535N5-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

35 ns

MATTE TIN

25 ohm

.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOW THRESHOLD

TO-220AB

e3

5 pF

MSCSM120AM027CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2970 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1400 A

733 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0035 ohm

733 A

UPPER

R-XUFM-X7

ISOLATED

.23 pF

MSCSM120AM03CT6LIAG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

3215 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1600 A

805 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0031 ohm

805 A

UPPER

R-XUFM-X11

ISOLATED

TC1550TG-G

Microchip Technology

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

25 ns

-55 Cel

20 ns

MATTE TIN

60 ohm

350 A

DUAL

R-PDSO-G8

1

Not Qualified

FAST SWITCHNG

e3

40

260

5 pF

APT1001RBVFRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e1

NOT SPECIFIED

NOT SPECIFIED

APT40M35JVR

Microchip Technology

700 W

1

93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

93 A

APT50M60L2VRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

308 A

3200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.06 ohm

77 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

APT56M60L

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

1580 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

56 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING, AVALANCHE RATED

TO-264AA

e3

APT6025BVRG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.25 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e1

APT60N60SCSG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

431 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1950 mJ

60 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

PURE MATTE TIN

.045 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

290 pF

APT66M60L

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

245 A

1845 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.09 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-264AA

e3

APTC60AM18SCG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

572 A

1800 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.018 ohm

143 A

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

APTC60DAM18CTG

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

833 W

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

572 A

1800 mJ

143 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.018 ohm

143 A

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.