SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 115

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TPIC5423LDWR

Texas Instruments

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

4 A

96 mJ

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

125 ns

70 ns

NICKEL PALLADIUM GOLD

.375 ohm

1.25 A

DUAL

R-PDSO-G24

1

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

e4

75 pF

TPIC5423LDW

Texas Instruments

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

1.39 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

4 A

96 mJ

1.25 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

125 ns

70 ns

.375 ohm

1.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

75 pF

NTL4502NT1

Onsemi

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

24 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

32 A

80 mJ

16

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.013 ohm

11.4 A

QUAD

S-XQCC-N16

DRAIN

Not Qualified

e0

235

NTL4502NT1G

Onsemi

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

24 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

32 A

80 mJ

16

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

11.4 A

QUAD

S-XQCC-N16

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRFG5210

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

2.72 A

64 mJ

.68 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.83 ohm

.68 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHQ8110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.75 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

e0

2N7334PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

1 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ93110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

9.2 A

75 mJ

2.3 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.1 ohm

2.3 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHG53110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

1.6 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRFG9110PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.73 ohm

.75 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ3110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHQ4214

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

62 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

2.25 ohm

1.6 A

QUAD

R-CQCC-N28

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

2N7336PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

1 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ593110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

11.2 A

70 mJ

2.8 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

2.8 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRFG5210PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

2.72 A

64 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.83 ohm

.68 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRFG6110PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

1 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ58110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.31 ohm

4.6 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHQ9110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

9.2 A

75 mJ

2.3 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.1 ohm

2.3 A

QUAD

S-CQCC-N28

Not Qualified

e0

2N7334

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

1 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

IRHG54110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.6 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.29 ohm

1.6 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHQ58110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

4.6 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.31 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRFG110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

1 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHQ567110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

70 mJ

4.6 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

122 ns

TIN LEAD

1.2 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

RH - 100K Rad(Si)

IRHQ57110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.31 ohm

4.6 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

OMD400T

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

400 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

54 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.35 ohm

13 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHQ7110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

PID1602

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

4 A

SINGLE

R-PSIP-T12

Not Qualified

40

260

PID1512

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

40

260

IRHQ6110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

9 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.62 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

HIGH RELIABILITY

e0

IRFEA240

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

44 A

80 mJ

11 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

11 A

QUAD

S-CQCC-N28

Not Qualified

AVALANCHE RATED

e0

PID1501

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

40

260

IRHG58110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.6 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.29 ohm

1.6 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHQ54110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.31 ohm

4.6 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

OMD100T

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

100 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.08 ohm

25 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHQ8110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRFG9110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.73 ohm

.75 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

OMD400V

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

400 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

54 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.35 ohm

13 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHG57110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

37 ns

-55 Cel

45 ns

TIN LEAD

.29 ohm

1.6 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

RH - 100K Rad(Si)

IRHQ563110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

70 mJ

4.6 A

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

122 ns

1.2 ohm

4.6 A

QUAD

S-CQCC-N28

RH - 300K Rad(Si)

IRHQ567110SCS

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

70 mJ

4.6 A

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

122 ns

TIN LEAD

1.2 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

MIL-19500

IRHQ7110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

e0

PID1609

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

4 A

SINGLE

R-PSIP-T12

Not Qualified

40

260

IRHQ4110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHQ53110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.31 ohm

4.6 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHG57110SCS

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.8 A

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

37 ns

-55 Cel

45 ns

.29 ohm

1.8 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IRHQ567110PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

70 mJ

4.6 A

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

122 ns

1.2 ohm

4.6 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

IRHQ63110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

9 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.62 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

HIGH RELIABILITY

e0

IRHQ57214SE

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

7.6 A

30 mJ

1.9 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

1.9 A

QUAD

S-CQCC-N28

Not Qualified

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.