SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 115

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRHQ3214

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

62 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

2.25 ohm

1.6 A

QUAD

R-CQCC-N28

Not Qualified

HIGH RELIABILITY

40

260

PID2609

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

4 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

40

260

IRHG54110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

1.6 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ3110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHQ9110PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

9.2 A

75 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

2.3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

OMD200V

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

80 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.11 ohm

25 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHG567110SCS

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.29 ohm

1.6 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

OMD500V

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

500 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

40 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.43 ohm

11 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHQ567110SCV

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

70 mJ

4.6 A

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

122 ns

1.2 ohm

4.6 A

QUAD

S-CQCC-N28

MIL-19500

IRHLG77214

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3.2 A

50.4 mJ

.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

1.1 ohm

.8 A

DUAL

R-PDIP-T14

1

Not Qualified

MO-036AB

PID2602

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

4 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

40

260

IRFEA240PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

44 A

80 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

11 A

QUAD

S-CQCC-N28

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

2N7336

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

PID2512

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

40

260

IRHG53110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.6 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.29 ohm

1.6 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRFG5110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

1 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHG6110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

56 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

OMD100V

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

100 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.08 ohm

25 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

OMD500

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

125 W

METAL

SWITCHING

500 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

40 A

11 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.43 ohm

11 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

OMD500T

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

500 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

40 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.43 ohm

11 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHQ597110SCS

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

11.2 A

70 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

2.8 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHLG7670Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4.28 A

13 mJ

1.07 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

FAST SWITCHING

MO-036AB

e0

IRHQ54110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

4.6 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.31 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHQ57214SESCS

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

7.6 A

30 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.5 ohm

1.9 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHLG7630Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4.28 A

13 mJ

1.07 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

FAST SWITCHING

MO-036AB

e0

IRHQ93110PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

9.2 A

75 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

2.3 A

QUAD

S-CQCC-N28

NOT SPECIFIED

NOT SPECIFIED

IRHLG73214

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3.2 A

50.4 mJ

.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

1.1 ohm

.8 A

DUAL

R-PDIP-T14

1

Not Qualified

MO-036AB

IRHG63110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

56 mJ

1 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRFG5110PBF

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

1 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ4110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

12 A

85 mJ

3 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

3 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRFG6110

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.8 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

IRHQ53110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

4.6 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.31 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHG58110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

1.6 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

PID1502

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

40

260

IRHG53110SCS

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.29 ohm

1.6 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

IRHQ57110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

18.4 A

47 mJ

4.6 A

28

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.31 ohm

4.6 A

QUAD

S-CQCC-N28

Not Qualified

e0

PID2502

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

40

260

OMD200T

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

METAL

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

80 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.11 ohm

25 A

DUAL

R-MDFM-F12

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHQ597110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

12 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

11.2 A

70 mJ

2.8 A

28

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

2.8 A

QUAD

S-CQCC-N28

Not Qualified

e0

IRHQ4214PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

62 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.25 ohm

1.6 A

QUAD

R-CQCC-N28

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IRHQ3214PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

62 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.25 ohm

1.6 A

QUAD

R-CQCC-N28

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IRHG57110PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

6.4 A

130 mJ

1.8 A

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

37 ns

-55 Cel

45 ns

.29 ohm

1.8 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

JANTXV2N7336

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

1 A

DUAL

R-CDIP-T14

Qualified

HIGH RELIABILITY

MO-036AB

e0

MIL-19500/598

IRF5EA1310PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

4

92 A

73 mJ

28

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.036 ohm

23 A

QUAD

S-CQCC-N28

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

JANTXV2N7335

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.73 ohm

.75 A

DUAL

R-CDIP-T14

Qualified

HIGH RELIABILITY

MO-036AB

e0

MIL-19500/599

BUZ102SL-4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

9.6 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

24.8 A

245 mJ

6.2 A

28

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.033 ohm

6.2 A

DUAL

R-PDSO-G28

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JANTX2N7335

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

3 A

75 mJ

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.73 ohm

.75 A

DUAL

R-CDIP-T14

Qualified

HIGH RELIABILITY

MO-036AB

e0

MIL-19500/599

JANTX2N7334PBF

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

4 A

75 mJ

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

1 A

DUAL

R-CDIP-T14

HIGH RELIABILITY

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.