SEPARATE, 2 ELEMENTS RF Power Field Effect Transistors (FET) 51

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  2. RF Power Field Effect Transistors (FET)
Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration (1)
    • SEPARATE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

A3G26H502W17SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

11.3 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

150 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

A2V07H400-04NR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

105 V

18.9 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

DUAL

R-PDFP-F4

3

SOURCE

e3

40

260

MRF24G300HS

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

14.9 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F4

SOURCE

MRF8P20160HSR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

UNSPECIFIED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-XDFP-F4

SOURCE

Not Qualified

ESD PROTECTED

40

260

MRFX600H-230MHZ

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

1.1 pF

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F4

40

260

935379257598

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

1.1 pF

935376369178

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

40

260

1.1 pF

A2T14H450-23NR6

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

17 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

6

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

QUAD

R-PQFP-F6

3

SOURCE

40

260

MRFX600HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFP-F4

SOURCE

40

260

1.1 pF

935376371178

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFP-F4

SOURCE

40

260

1.1 pF

MRFX600H-88MHZ

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

1.1 pF

A5G37H110NT4

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

125 V

12 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

2

S BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-PDSO-N6

3

SOURCE

40

260

A5G23H065NT4

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

125 V

14 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

2

S BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-PDSO-N6

3

SOURCE

40

260

A2G26H281-04SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

12.9 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F4

40

260

AFV09P350-04NR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

105 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

DUAL

R-PDFP-F4

3

e3

40

260

AFV09P350-04GNR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

105 V

18.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

DUAL

R-PDSO-G4

3

e3

40

260

935376368178

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G4

SOURCE

40

260

1.1 pF

MRFX600HR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

40

260

1.1 pF

MRFX600GSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDSO-G4

SOURCE

40

260

1.1 pF

A2T08VD020NT1

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

105 V

18 dB

NO LEAD

SQUARE

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

24

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

BOTTOM

S-PBCC-N24

3

SOURCE

e3

40

260

MRF24G300H

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

14.9 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFM-F4

SOURCE

935374081598

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

179 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-PDFM-F4

SOURCE

1.1 pF

A3G35H100-04SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

13 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F4

40

260

MMRF1317HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

17.4 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-55 Cel

DUAL

R-CDFP-F4

SOURCE

40

260

2.43 pF

MMRF1024HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

65 V

13 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

6

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

QUAD

R-CQFP-F6

40

260

MMRF1317HR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

17.4 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-55 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.43 pF

MMRF1312GSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

112 V

18.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDSO-G4

SOURCE

40

260

2.5 pF

MMRF1314HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFP-F4

SOURCE

40

260

2.98 pF

MMRF1050HR6

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

19 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-55 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

MRF8P20160HR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

UNSPECIFIED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-XDFM-F4

SOURCE

Not Qualified

40

260

MRF8P20100HSR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

Not Qualified

ESD PROTECTION

40

260

MMRF1312HR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

112 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.5 pF

MMRF1306HR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

133 V

23 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

40

260

2.8 pF

MRF8VP13350GNR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

100 V

17.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

DUAL

R-PDSO-G4

3

SOURCE

e3

40

260

MMRF1314GSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDSO-G4

SOURCE

40

260

2.98 pF

MRF8VP13350NR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

100 V

17.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

TIN

DUAL

R-PDFP-F4

3

SOURCE

e3

40

260

MMRF1314HR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.98 pF

MMRF1312HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

112 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFP-F4

SOURCE

40

260

2.5 pF

MRF8P20100HR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

NOT APPLICABLE

SOURCE

Not Qualified

ESD PROTECTION

40

260

MMRF1306HSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

133 V

23 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

40

260

2.8 pF

AFV141KGSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-G4

SOURCE

40

260

2.98 pF

A3G26H501W17SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

12.7 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

225 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

A3G22H400-04SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

14.3 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F4

40

260

AFV141KHR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.98 pF

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

13.3 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

150 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

AFV141KHSR5

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.98 pF

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

150 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.