SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 110

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMD8580

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

482 A

337 mJ

82 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

74 ns

-55 Cel

70 ns

MATTE TIN

.0046 ohm

82 A

DUAL

R-PDSO-N8

1

DRAIN SOURCE

MO-240AA

e3

30

260

38 pF

NTTFD2D8N03P1E

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

327 A

55.4 mJ

80 A

8

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0025 ohm

80 A

QUAD

S-PQCC-N8

1

SOURCE

e3

30

260

29 pF

NTTFD021N08C

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

349 A

31 mJ

24 A

8

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

24 A

QUAD

S-PQCC-N8

1

e3

30

260

11 pF

NTMFD4C820NT1G

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.88 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

55 A

16 mJ

12 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0108 ohm

9.1 A

DUAL

R-PDSO-F8

1

DRAIN SOURCE

e3

30

260

125 pF

FDPC1012S-P

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

120 A

181 mJ

88 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0022 ohm

88 A

DUAL

S-PDSO-N8

1

SOURCE

e3

30

260

130 pF

FDMS001N025DSD

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

381 A

121 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Tin (Sn)

.00325 ohm

19 A

DUAL

R-PDSO-N8

1

e3

30

260

NTMFD4901NFT3G

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

2

100 A

115 mJ

23.4 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

13.5 A

DUAL

R-PDSO-F8

1

DRAIN SOURCE

e3

30

260

NTTFD4D1N03P1E

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

408 A

74 mJ

8

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0054 ohm

54 A

QUAD

S-PQCC-N12

1

MO-220WEEC-1

e3

30

260

25 pF

NTMFD2D4N03P8

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

227 A

54 mJ

56 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

26 ns

-55 Cel

43 ns

Tin (Sn)

.007 ohm

56 A

DUAL

R-PDSO-N8

1

SOURCE

e3

30

260

60 pF

FDMD8900

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

280 A

73 mJ

66 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

27 ns

-55 Cel

50 ns

MATTE TIN

.004 ohm

66 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

75 pF

FDS6986AS_NL

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

6.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

27 ns

-55 Cel

29 ns

.029 ohm

6.5 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

60 pF

NTMFD0D9N02P1E

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

29.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

356 A

150 mJ

77 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.003 ohm

77 A

DUAL

R-PDSO-N8

1

SOURCE

e3

30

260

22 pF

FDPC1002S

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

40 A

21 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

13 A

DUAL

S-PDSO-N8

SOURCE

MO-240BA

FDMD8530

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

1047 A

661 mJ

201 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

49 ns

-55 Cel

148 ns

MATTE TIN

.00125 ohm

201 A

DUAL

R-PDSO-N8

1

DRAIN SOURCE

MO-240AA

e3

30

260

310 pF

FDPC3D5N025X9D

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

349 A

96 mJ

74 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ns

-55 Cel

56 ns

MATTE TIN

.00301 ohm

74 A

DUAL

S-PDSO-N6

1

e3

30

260

130 pF

SH32N65DM6AG

STMicroelectronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

208 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

120 A

778 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.097 ohm

32 A

DUAL

R-PDSO-G9

3

e3

30

245

.3 pF

AEC-Q101

BSG0811ND

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.004 ohm

19 A

DUAL

R-PDSO-N7

1

SOURCE

e3

FF2MR12KM1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1000 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

302 pF

BSG0813NDI

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.004 ohm

50 A

DUAL

R-PDSO-N8

1

SOURCE

e3

38 pF

BSG0810NDI

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.004 ohm

50 A

DUAL

R-PDSO-N8

1

SOURCE

e3

33 pF

FF2MR12KM1P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1000 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

302 pF

FF6MR12KM1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

BSG0813NDIATMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.004 ohm

19 A

DUAL

R-PDSO-N7

1

SOURCE

e3

FF3MR12KM1P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

750 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

UL RECOGNIZED

227 pF

IEC-61140

BSG0811NDATMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.004 ohm

19 A

DUAL

R-PDSO-N7

1

SOURCE

e3

FF6MR12KM1P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

SP001241674

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.004 ohm

50 A

DUAL

R-PDSO-N8

SOURCE

33 pF

IRFI4019HG-117P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

18 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

34 A

77 mJ

8.7 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

8.7 A

SINGLE

R-PSFM-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IRF8513TRPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

64 A

49 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0155 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

BUK9V13-40H

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

46 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

169 A

10.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0169 ohm

42 A

DUAL

R-PDSO-X8

1

HIGH RELIABILITY

e3

30

260

84 pF

AEC-Q101; IEC-60134

BUK7V4R2-40H

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

393 A

42.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

98 A

DUAL

R-PDSO-X8

1

DRAIN SOURCE

e3

30

260

200 pF

AEC-Q101; IEC-60134

PSMN4R2-40VSH

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

393 A

42.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

98 A

DUAL

R-PDSO-X8

1

DRAIN SOURCE

e3

30

260

200 pF

IEC-60134

DMT3006LPB-13

Diodes Incorporated

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

100 A

28 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0111 ohm

50 A

DUAL

R-PDSO-F8

3

DRAIN

e3

72 pF

MIL-STD-202

HIP2060AS2

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

25 A

100 mJ

10 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN LEAD

.15 ohm

10 A

SINGLE

R-PSSO-G5

Not Qualified

MO-169AB

e0

225

HIP2060AS1

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

25 A

100 mJ

10 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

10 A

SINGLE

R-PSFM-T5

SOURCE

Not Qualified

TS-001AA

e0

HAT2218R-EL-E

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

60 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.04 ohm

7.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

20

260

RJK0222DNS-00-J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK0214DPA-00-J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

35 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

45 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0223DNS-00-J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK0389DPA-00#J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

20 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0165 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0214DPA-00#J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

35 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

45 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0215DPA-00#J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

25 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

40 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0223DNS-00#J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK0216DPA-00-J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

20 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

32 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0222DNS-00#J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK0216DPA-00#J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

20 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

32 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0215DPA-00-J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

25 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

40 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0137 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK0389DPA-00-J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

20 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0165 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.