SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 110

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFH4251DTRPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

120 A

61 mJ

188 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0046 ohm

45 A

DUAL

R-PDSO-N8

1

SOURCE

CAS300M12BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0567 ohm

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

113 pF

BSZ215CHXTMA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

20 A

11 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.055 ohm

5.1 A

DUAL

S-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

AEC-Q101

CAS300M17BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

UPPER

R-XUFM-X7

NOT SPECIFIED

NOT SPECIFIED

APTMC120AM08CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1100 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

550 A

250 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON CARBIDE

-40 Cel

.01 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

IRF7904TRPBF

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

89 A

250 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10.8 ohm

11 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDMD8240LET40

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

489 A

216 mJ

103 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

38 ns

-55 Cel

76 ns

Matte Tin (Sn) - annealed

.0026 ohm

103 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

52 pF

FDPC8014AS

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

1116 A

294 mJ

159 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

41 ns

-55 Cel

86 ns

MATTE TIN

.001 ohm

159 A

DUAL

R-PDSO-N8

1

e3

30

260

245 pF

APTM100A13SCG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

240 A

1300 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.156 ohm

65 A

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

FDMD8560L

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

550 A

384 mJ

93 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

61 ns

-55 Cel

110 ns

MATTE TIN

.0032 ohm

93 A

DUAL

R-PDSO-N8

1

DRAIN SOURCE

MO-240AA

e3

30

260

60 pF

FDMD8240L

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

464 A

216 mJ

98 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

38 ns

-55 Cel

76 ns

Matte Tin (Sn) - annealed

.0026 ohm

98 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

52 pF

SIZ918DT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

50 A

16 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.012 ohm

16 A

DUAL

R-PDSO-N6

DRAIN SOURCE

IRFI4019H-117P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

18 W

PLASTIC/EPOXY

AMPLIFIER

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

34 A

77 mJ

8.7 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

8.7 A

SINGLE

R-PSFM-T5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

APTMC170AM60CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

UNSPECIFIED

SWITCHING

1700 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

2

100 A

50 A

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.07 ohm

50 A

UPPER

R-XUFM-P12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

MSCSM120AM042CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2031 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

990 A

495 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0052 ohm

495 A

UPPER

R-XUFM-X7

ISOLATED

.15 pF

CAS120M12BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

480 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.016 ohm

UPPER

R-XUFM-X7

ISOLATED

43.8 pF

MKE38P600LB-TRR

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1950 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

50 A

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

MKE38P600LB-TUB

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1950 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

50 A

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

MKE38P600LB

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1950 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

50 A

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

FF6MR12KM1BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

FF6MR12KM1PHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

IRFI4024H-117P

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

14 W

PLASTIC/EPOXY

AMPLIFIER

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

44 A

7.4 mJ

11 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

.06 ohm

11 A

SINGLE

R-PSFM-T5

ISOLATED

Not Qualified

e3

BSM080D12P2C008

ROHM

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

160 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

80 A

UPPER

R-XUFM-X8

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

SIZ340DT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

100 A

5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.0095 ohm

26.5 A

DUAL

S-PDSO-N8

1

DRAIN SOURCE

MSCSM120AM027CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2970 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1400 A

733 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0035 ohm

733 A

UPPER

R-XUFM-X7

ISOLATED

.23 pF

APTC60AM18SCG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

572 A

1800 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.018 ohm

143 A

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

FDMD8260LET60

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

44 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

304 A

181 mJ

67 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

41 ns

-55 Cel

94 ns

MATTE TIN

.0058 ohm

67 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

50 pF

IRF7901D1

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.038 ohm

6.2 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e0

IRF7901D1GPBF

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

6.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.038 ohm

6.2 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

IRF7901D1PBF

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.038 ohm

6.2 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

IRF7901D1TR

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.038 ohm

6.2 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e0

IRF7901D1TRPBF

International Rectifier

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.038 ohm

6.2 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

APTC80AM75SCG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

232 A

670 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.075 ohm

56 A

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

AVALANCHE RATED

e1

CAB530M12BM3

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1060 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.00355 ohm

UPPER

R-XUFM-X7

ISOLATED

84 pF

SIZ710DT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

48 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

70 A

20 mJ

35 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0068 ohm

16 A

DUAL

R-XDSO-N6

DRAIN

Not Qualified

e3

40

260

PSMN4R2-40VSHX

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

393 A

42.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

98 A

DUAL

R-PDSO-X8

1

DRAIN SOURCE

e3

30

260

200 pF

IEC-60134

BUK9V13-40HX

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

46 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

169 A

10.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Tin (Sn)

.0169 ohm

42 A

DUAL

R-PDSO-X8

1

HIGH RELIABILITY

e3

84 pF

AEC-Q101; IEC-60134

FDQ7238S

Fairchild Semiconductor

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

11 A

11

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0145 ohm

11 A

DUAL

R-PDSO-G11

1

Not Qualified

BSM120D12P2C005

ROHM

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

780 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

240 A

120 A

8

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

120 A

UPPER

R-XUFM-X8

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

VMM1500-0075X2

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1560 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.00038 ohm

1560 A

UNSPECIFIED

R-XXFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HP8K22TB

ROHM

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

48 A

11.4 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0133 ohm

12 A

DUAL

R-PDSO-F6

1

DRAIN SOURCE

e3

10

260

HP8S36TB

ROHM

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

48 A

5.3 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0133 ohm

12 A

DUAL

R-PDSO-F6

1

DRAIN SOURCE

10

260

BSG0810NDIATMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

160 A

30 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.004 ohm

19 A

DUAL

R-PDSO-N7

1

SOURCE

e3

FDQ7236AS

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

14 A

14

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0132 ohm

11 A

DUAL

R-PDSO-G14

1

e4

30

260

FDQ7238AS

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

14 A

11

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0132 ohm

11 A

DUAL

R-PDSO-G11

1

Not Qualified

e3

30

260

NTMFD4C85NT3G

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

300 A

34.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0043 ohm

15.4 A

DUAL

R-PDSO-F8

1

e3

30

260

NTMFD1D6N03P8

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

227 A

54 mJ

56 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

26 ns

-55 Cel

43 ns

Tin (Sn)

.005 ohm

56 A

DUAL

R-PDSO-N8

1

SOURCE

e3

30

260

60 pF

FDPC1012S

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

120 A

181 mJ

88 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0022 ohm

88 A

DUAL

S-PDSO-N8

1

SOURCE

MO-240BA

e3

30

260

130 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.