Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
63 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
120 A |
61 mJ |
188 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0046 ohm |
45 A |
DUAL |
R-PDSO-N8 |
1 |
SOURCE |
|||||||||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1500 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.0567 ohm |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
113 pF |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
20 A |
11 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.055 ohm |
5.1 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON CARBIDE |
UPPER |
R-XUFM-X7 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1100 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
550 A |
250 A |
7 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON CARBIDE |
-40 Cel |
.01 ohm |
250 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
89 A |
250 mJ |
11 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
10.8 ohm |
11 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
489 A |
216 mJ |
103 A |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
38 ns |
-55 Cel |
76 ns |
Matte Tin (Sn) - annealed |
.0026 ohm |
103 A |
DUAL |
R-PDSO-N12 |
1 |
DRAIN SOURCE |
e3 |
30 |
260 |
52 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
37 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1116 A |
294 mJ |
159 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
41 ns |
-55 Cel |
86 ns |
MATTE TIN |
.001 ohm |
159 A |
DUAL |
R-PDSO-N8 |
1 |
e3 |
30 |
260 |
245 pF |
|||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1000 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
240 A |
1300 mJ |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.156 ohm |
65 A |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
550 A |
384 mJ |
93 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
61 ns |
-55 Cel |
110 ns |
MATTE TIN |
.0032 ohm |
93 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN SOURCE |
MO-240AA |
e3 |
30 |
260 |
60 pF |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
42 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
464 A |
216 mJ |
98 A |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
38 ns |
-55 Cel |
76 ns |
Matte Tin (Sn) - annealed |
.0026 ohm |
98 A |
DUAL |
R-PDSO-N12 |
1 |
DRAIN SOURCE |
e3 |
30 |
260 |
52 pF |
||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
50 A |
16 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.012 ohm |
16 A |
DUAL |
R-PDSO-N6 |
DRAIN SOURCE |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
18 W |
PLASTIC/EPOXY |
AMPLIFIER |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
34 A |
77 mJ |
8.7 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.095 ohm |
8.7 A |
SINGLE |
R-PSFM-T5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
350 W |
UNSPECIFIED |
SWITCHING |
1700 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
100 A |
50 A |
12 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.07 ohm |
50 A |
UPPER |
R-XUFM-P12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2031 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
990 A |
495 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.0052 ohm |
495 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
.15 pF |
||||||||||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
480 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.016 ohm |
UPPER |
R-XUFM-X7 |
ISOLATED |
43.8 pF |
|||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1950 mJ |
9 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.045 ohm |
50 A |
DUAL |
R-PDSO-G9 |
ISOLATED |
HIGH RELIABILITY |
UL RECOGNIZED |
||||||||||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1950 mJ |
9 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.045 ohm |
50 A |
DUAL |
R-PDSO-G9 |
ISOLATED |
HIGH RELIABILITY |
UL RECOGNIZED |
||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1950 mJ |
9 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.045 ohm |
50 A |
DUAL |
R-PDSO-G9 |
ISOLATED |
HIGH RELIABILITY |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
102.8 ns |
-40 Cel |
167.9 ns |
.00581 ohm |
250 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
112 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
102.8 ns |
-40 Cel |
167.9 ns |
.00581 ohm |
250 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
112 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
14 W |
PLASTIC/EPOXY |
AMPLIFIER |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
44 A |
7.4 mJ |
11 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.06 ohm |
11 A |
SINGLE |
R-PSFM-T5 |
ISOLATED |
Not Qualified |
e3 |
|||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
160 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON CARBIDE |
80 A |
UPPER |
R-XUFM-X8 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
100 A |
5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
.0095 ohm |
26.5 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN SOURCE |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2970 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1400 A |
733 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.0035 ohm |
733 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
.23 pF |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
572 A |
1800 mJ |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.018 ohm |
143 A |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
44 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
304 A |
181 mJ |
67 A |
12 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
41 ns |
-55 Cel |
94 ns |
MATTE TIN |
.0058 ohm |
67 A |
DUAL |
R-PDSO-N12 |
1 |
DRAIN SOURCE |
e3 |
30 |
260 |
50 pF |
||||||||||||||||
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.038 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e0 |
|||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
6.2 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.038 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.038 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.038 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e0 |
|||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.038 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
800 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
232 A |
670 mJ |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.075 ohm |
56 A |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||||
Wolfspeed |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1060 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.00355 ohm |
UPPER |
R-XUFM-X7 |
ISOLATED |
84 pF |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
48 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
70 A |
20 mJ |
35 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0068 ohm |
16 A |
DUAL |
R-XDSO-N6 |
DRAIN |
Not Qualified |
e3 |
40 |
260 |
|||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
85 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
393 A |
42.3 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0042 ohm |
98 A |
DUAL |
R-PDSO-X8 |
1 |
DRAIN SOURCE |
e3 |
30 |
260 |
200 pF |
IEC-60134 |
||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
46 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
169 A |
10.6 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
.0169 ohm |
42 A |
DUAL |
R-PDSO-X8 |
1 |
HIGH RELIABILITY |
e3 |
84 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
50 A |
11 A |
11 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0145 ohm |
11 A |
DUAL |
R-PDSO-G11 |
1 |
Not Qualified |
||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
780 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
240 A |
120 A |
8 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
120 A |
UPPER |
R-XUFM-X8 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
75 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1560 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.00038 ohm |
1560 A |
UNSPECIFIED |
R-XXFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
48 A |
11.4 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0133 ohm |
12 A |
DUAL |
R-PDSO-F6 |
1 |
DRAIN SOURCE |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
48 A |
5.3 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0133 ohm |
12 A |
DUAL |
R-PDSO-F6 |
1 |
DRAIN SOURCE |
10 |
260 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
160 A |
30 mJ |
7 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.004 ohm |
19 A |
DUAL |
R-PDSO-N7 |
1 |
SOURCE |
e3 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
50 A |
14 A |
14 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0132 ohm |
11 A |
DUAL |
R-PDSO-G14 |
1 |
e4 |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
50 A |
14 A |
11 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0132 ohm |
11 A |
DUAL |
R-PDSO-G11 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
300 A |
34.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0043 ohm |
15.4 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
23 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
227 A |
54 mJ |
56 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
26 ns |
-55 Cel |
43 ns |
Tin (Sn) |
.005 ohm |
56 A |
DUAL |
R-PDSO-N8 |
1 |
SOURCE |
e3 |
30 |
260 |
60 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
120 A |
181 mJ |
88 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0022 ohm |
88 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
MO-240BA |
e3 |
30 |
260 |
130 pF |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.