N-Channel Insulated Gate Bipolar Transistors (IGBT) 474

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
2ED300C17SROHSBPSA1	Infineon Technologies	N-Channel														85 Cel	SILICON		-25 Cel						1
2ED300C17STROHSBPSA1	Infineon Technologies	N-Channel														85 Cel	SILICON		-25 Cel						1
IKY40N120CS6XKSA1	Infineon Technologies	N-Channel			500 W	80 A			2.15 V				445 ns			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN						e3			56 ns
FF450R12KT4F	Infineon Technologies	N-Channel			2400 W	580 A			2.15 V				720 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED					230 ns
IGA03N120H2XKSA1	Infineon Technologies	N-Channel											310 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	3.9 V	TIN						e3			14.4 ns
IHW30N135R5XKSA1	Infineon Technologies	N-Channel			330 W	60 A			1.95 V				430 ns			175 Cel	SILICON	1350 V	-40 Cel	20 V	6.4 V	TIN						e3
FS400R07A3E3H6BPSA1	Infineon Technologies	N-Channel			811 W	5001 A			6.5 V				430 ns			150 Cel	SILICON	705 V	-40 Cel	20 V	6.5 V				1	ISOLATED					200 ns
6PS18012E4FG38393NWSA1	Infineon Technologies	N-Channel														150 Cel	SILICON	1200 V	-25 Cel										NOT SPECIFIED	NOT SPECIFIED
FB30R06W1E3ENG	Infineon Technologies	N-Channel			115 W	39 A			2 V				245 ns			150 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V					ISOLATED					42 ns
AIKW75N60CTXKSA1	Infineon Technologies	N-Channel	SINGLE WITH BUILT-IN DIODE	NO	428 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	365 ns	3	FLANGE MOUNT	175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3			TO-247	e3			69 ns	AEC-Q101
FS150R12KT4P_B11	Infineon Technologies	N-Channel			750 W				2.1 V				605 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED					165 ns
IKD04N60RAATMA1	Infineon Technologies	N-Channel			75 W	8 A			2.1 V				342 ns			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V								NOT SPECIFIED	NOT SPECIFIED	20 ns
FP25R12W2T4P_B11ENG	Infineon Technologies	N-Channel							2.25 V				520 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED					47 ns
6PS04512E43W39693	Infineon Technologies	N-Channel														55 Cel	SILICON		-25 Cel
FS215R04A1E3DBOMA1	Infineon Technologies	N-Channel			715 W	290 A			1.7 V				340 ns			150 Cel	SILICON	400 V	-40 Cel	20 V	6.5 V					ISOLATED					150 ns
6MS24017P43W41646NOSA1	Infineon Technologies	N-Channel	COMPLEX	YES			UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	12			MICROELECTRONIC ASSEMBLY	55 Cel	SILICON	1700 V	-25 Cel				UNSPECIFIED	R-XXMA-X					NOT SPECIFIED	NOT SPECIFIED
FS800R07A2E3B31BOSA1	Infineon Technologies	N-Channel			1550 W	700 A			1.5 V				620 ns			150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V					ISOLATED					230 ns
FZ1200R16KF4_S1	Infineon Technologies	N-Channel			7800 W	1200 A										125 Cel	SILICON	1600 V	-40 Cel	20 V	6.5 V					ISOLATED					1000 ns
IKW15N120BH6XKSA1	Infineon Technologies	N-Channel			200 W	30 A			2.3 V				373 ns			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN						e3			46 ns
2ED300C17-ST	Infineon Technologies	N-Channel														85 Cel	SILICON		-25 Cel						1				NOT SPECIFIED	NOT SPECIFIED
IHW40N120R5XKSA1	Infineon Technologies	N-Channel			394 W	80 A			1.85 V				440 ns			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V	TIN						e3
AIKW75N60CT	Infineon Technologies	N-Channel	SINGLE WITH BUILT-IN DIODE	NO	428 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	365 ns	3	FLANGE MOUNT	175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3			TO-247	e3			69 ns	AEC-Q101
IRG5K50PM06E	Infineon Technologies	N-Channel				50 A			2.1 V				220 ns			150 Cel	SILICON	600 V	-40 Cel	20 V	5.5 V										80000 ns
C67078-A4675-A002	Infineon Technologies	N-Channel							2.6 V				380 ns			150 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V										120 ns
IRG5K100PM06F	Infineon Technologies	N-Channel				100 A			2.1 V				260 ns			150 Cel	SILICON	600 V	-40 Cel	20 V	5.5 V										125000 ns
FZ1600R17HP4B2BOSA2	Infineon Technologies	N-Channel			10500 W				2.25 V				1710 ns			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V				1	ISOLATED					805 ns
IKD15N60RAATMA1	Infineon Technologies	N-Channel			250 W	30 A			2.1 V				430 ns			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V								NOT SPECIFIED	NOT SPECIFIED	26 ns
IRGIB4640DPBF	Infineon Technologies	N-Channel				65 A			1.9 V				119 ns			175 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V								NOT SPECIFIED	NOT SPECIFIED	64 ns
FD1000R17IE4DB2BOSA1	Infineon Technologies	N-Channel			6250 W	1390 A			2.45 V				1910 ns			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V					ISOLATED			NOT SPECIFIED	NOT SPECIFIED	830 ns
Q67050-A4220-A101	Infineon Technologies	N-Channel							3.15 V				122 ns			150 Cel	SILICON	600 V	-55 Cel	20 V	5 V										11 ns
Q67041-A4688-A001	Infineon Technologies	N-Channel							2.5 V				135 ns			150 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V										29 ns
IRG5U100HH06E	Infineon Technologies	N-Channel				100 A							920 ns			150 Cel	SILICON	600 V	-40 Cel	20 V	5.5 V					ISOLATED					100000 ns
Q67050-A4222-A101	Infineon Technologies	N-Channel							3.15 V				100 ns			150 Cel	SILICON	600 V	-55 Cel	20 V	5 V										23.5 ns
IHW40N65R6	Infineon Technologies	N-Channel			210 W	83 A							256 ns			175 Cel	SILICON	650 V		20 V	4.8 V										36 ns
6PS18012E4FG38393	Infineon Technologies	N-Channel														150 Cel	SILICON	1200 V	-25 Cel
IGC10T65QEX1SA1	Infineon Technologies	N-Channel							2.32 V							175 Cel	SILICON	650 V	-40 Cel	20 V	5.6 V								NOT SPECIFIED	NOT SPECIFIED
F5-75R06KE3_B5	Infineon Technologies	N-Channel	COMPLEX	NO	250 W		UNSPECIFIED	POWER CONTROL	1.9 V	UNSPECIFIED	RECTANGULAR	2	270 ns	35	FLANGE MOUNT	150 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X35		ISOLATED			NOT SPECIFIED	NOT SPECIFIED	45 ns
IRG5K100HF12B	Infineon Technologies	N-Channel				100 A			2.6 V				610 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6 V					ISOLATED					85000 ns
IRG5K15FF06Z	Infineon Technologies	N-Channel				15 A			2.1 V				235 ns			150 Cel	SILICON	600 V	-40 Cel	20 V	5.5 V					ISOLATED					25000 ns
IRG5K75HF12A	Infineon Technologies	N-Channel				75 A			2.6 V				570 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6 V					ISOLATED					90000 ns
IFF2400P17AE4BPSA1	Infineon Technologies	N-Channel							2.3 V							150 Cel	SILICON	1700 V	-40 Cel						1	ISOLATED
IRG5U100HF12A	Infineon Technologies	N-Channel				100 A			3.5 V				795 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6 V					ISOLATED					120000 ns
IFS100B12N3E4_B40	Infineon Technologies	N-Channel			515 W				2.1 V				610 ns			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.35 V					ISOLATED					210 ns
Q67050-A4013-A001	Infineon Technologies	N-Channel							2.5 V				326 ns			150 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V										229 ns
IGC109T120T8RMX1SA1	Infineon Technologies	N-Channel							1.74 V							175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V
IRGS10B60KDPBFTRL	Infineon Technologies	N-Channel				35 A							294 ns			150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V										4000 ns
IGC50T120T8RLX1SA3	Infineon Technologies	N-Channel							2.07 V							175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V
FP25R12W2T7	Infineon Technologies	N-Channel							1.74 V				670 ns			175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V					ISOLATED					74 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.